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Polymer-Based Capacitors, Junction Field -Effect Transistors, And A Follower Circuit By Lithography, Self -Assembly, And Ink -Jet Printing Techniques, Yuxin Liu
Doctoral Dissertations
The study of organic materials to create field-effect transistors has recently emerged and is gaining much interest. All-polymer electronic devices are currently in their infancy, like semiconductor devices when they first appeared. As a result, current performance of these devices is in no way comparable to the state-of-the-art semiconductor devices. However, all-polymer devices have a few possible appealing advantages. First, all polymer devices have the potential for low-cost fabrication due to their ease of manufacturability, with fewer and simpler processing steps compared with solid-state semiconductor devices. Secondly, polymer devices offer the ability of material flexibility. Lastly, polymer devices may prove …
Simulation Of The Variability In Microelectronic Capacitors Having Polycrystalline Dielectrics With Columnar Microstructure, Jesse Cousins
Simulation Of The Variability In Microelectronic Capacitors Having Polycrystalline Dielectrics With Columnar Microstructure, Jesse Cousins
Electronic Theses and Dissertations
Increasing circuit densities drive the search for microelectronic capacitors with smaller areas. One solution which reduces capacitor size while leaving capacitance constant is to use a thin film of a high permittivity material such as Ta205, SrTiOy (STO), or (Ba,Sr)Ti03 (BST), whose dielectric constants are much higher than those of currently used dielectrics such as Si02 and Si3N1 One drawback of these dielectric films is that they have a polycrystalline microstructure and the permittivity and leakage current density depend on grain size and orientation. It is unknown how microstructure variations will affect the variability and yield of devices incorporating these …
Characterization Of Hfo2 Capacitors, Fan Yang
Characterization Of Hfo2 Capacitors, Fan Yang
Electronic Theses and Dissertations
Hafnium oxide (HfOn) is a promising dielectric for future microelectronic applications. Hf02 thin films (10-75nm) were deposited on Pt/Si02/Si substrates by pulsed DC magnetron reactive sputtering. Top electrodes of Pt were formed by e-beam evapo- ration through an aperture mask on the samples to create MIM (Metal-Insulator-Metal) capacitors. Various processing conditions (Arloz ratio, DC power and deposition rate) and post-deposition annealing conditions (time and temperature) were investigated. The structure of the Hf02 films was characterized by X-ray diffraction (XRD) and the roughness was measured by a profilometer. The electrical properties were characterized in terms of their relative permittivity (E,(T) and …