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Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant
Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant
Graduate Theses and Dissertations
Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …
Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi
Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi
Graduate Theses and Dissertations
The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because they are …