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Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni Aug 2010

Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni

Theses and Dissertations

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since …