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Electrical and Computer Engineering

Virginia Commonwealth University

2009

MOLECULAR-BEAM EPITAXY

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Full-Text Articles in Engineering

Epitaxial Growth Of (001)-Oriented Ba0.5sr0.5tio3 Thin Films On A-Plane Sapphire With An Mgo/Zno Bridge Layer, Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L.M. B. Allredge, S. W. Kirchoefer, J. M. Pond Jan 2009

Epitaxial Growth Of (001)-Oriented Ba0.5sr0.5tio3 Thin Films On A-Plane Sapphire With An Mgo/Zno Bridge Layer, Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L.M. B. Allredge, S. W. Kirchoefer, J. M. Pond

Electrical and Computer Engineering Publications

High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire(112¯0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [112¯0] and BST [110]/MgO [110]//ZnO [11¯00]. …