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Design And Fabrication Of High-Resolution Epitaxial 4h-Sic Metal Insulator Semiconductor Detectors, Omerfaruk Karadavut

Theses and Dissertations

In the last two decades, significant strides have been made in the epitaxial film growth of 4H-silicon carbide (4H-SiC), establishing it as a premier wide bandgap material for radiation detection application under harsh environments. This is primarily attributed to its unique combination of physical properties such as high thermal conductivity, wide bandgap, robust breakdown field, and radiation hardness. Metal/4H-SiC epitaxial layer Schottky barrier diodes (SBDs) have emerged as reliable radiation detectors for harsh environments. However, the utilization of thicker epitaxial layer devices encounters challenges due to the minimum achievable doping concentration in 4H-SiC epitaxial layers, necessitating higher bias voltages for …