Engineering Commons^™

Design And Fabrication Of High-Resolution Epitaxial 4h-Sic Metal Insulator Semiconductor Detectors, Omerfaruk Karadavut

Theses and Dissertations

In the last two decades, significant strides have been made in the epitaxial film growth of 4H-silicon carbide (4H-SiC), establishing it as a premier wide bandgap material for radiation detection application under harsh environments. This is primarily attributed to its unique combination of physical properties such as high thermal conductivity, wide bandgap, robust breakdown field, and radiation hardness. Metal/4H-SiC epitaxial layer Schottky barrier diodes (SBDs) have emerged as reliable radiation detectors for harsh environments. However, the utilization of thicker epitaxial layer devices encounters challenges due to the minimum achievable doping concentration in 4H-SiC epitaxial layers, necessitating higher bias voltages for …

Epitaxial 4h-Sic Radiation Detectors For Harsh Environment Applications, Joshua W. Kleppinger

Theses and Dissertations

Epitaxial 4H-silicon carbide (4H-SiC) is an essential semiconductor material for the development of harsh environment radiation detectors due to its excellent electrical and thermal properties and resistance to radiation damage, opening the door for a wide variety of applications in NASA space missions, nuclear safeguards, and nuclear energy. However, the low atomic numbers of its constituent atoms Si (Z = 14) and C (Z = 6) make 4H-SiC nearly transparent to most neutrally charged radiation which can only be compensated using thicker active volumes.

In this dissertation, Ni/n-4H-SiC Schottky barrier diode (SBD) radiation detectors are fabricated for the first time …

Improved N-Type 4h-Sic Epitaxial Layer Radiation Detectors And Noise Analysis Of Front-End Readout Electronics, Khai V. Nguyen

Theses and Dissertations

Schottky barrier radiation detectors were fabricated on n-type 4H-SiC epitaxial layers (12 – 50 μm) grown by hot wall CVD process on highly nitrogen doped 4H-SiC (0001) substrates with 4-8º off-cut towards the ̅ direction. Ni/4H-SiC Schottky barrier radiation detectors, a very low leakage current of 0.18 nA at 250 V bias, revealing low thermal noise, was observed in current-voltage (I-V) measurements. Using a thermionic emission model, junction properties such as barrier height of ≥1.10 eV and an ideality factor of ≤1.29 were determined. An effective carrier concentration of 1.03×1015 cm-3 was calculated by capacitance-voltage (C-V) measurement. Deep level transient …