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Fabrication And Characterization Of Compact High Resolution Radiation Detectors Based On 4h-Sic N-Type Epilayer And Cdznte, Kelvin Juvenal Zavalla Mendoza
Fabrication And Characterization Of Compact High Resolution Radiation Detectors Based On 4h-Sic N-Type Epilayer And Cdznte, Kelvin Juvenal Zavalla Mendoza
Theses and Dissertations
The need of room-temperature, compact, and high resolution radiation detectors has opened the path for the development of new materials with suitable properties. Silicon carbide (SiC) and CdZnTe (CZT) are semiconductor materials with wide band gap that can operate efficiently at room temperatures (RT) and above. CZT has a high average atomic number (Z) which offers a high photoelectric absorption coefficient for x-/gamma rays. SiC allows high energy heavy ion detection due to its high radiation hardness even at temperatures much higher than room temperatures (RT). This thesis focuses on the fabrication and characterization of semiconductor based radiation detectors for …