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Electrical and Computer Engineering

University at Albany, State University of New York

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Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak Jan 2015

Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak

Legacy Theses & Dissertations (2009 - 2024)

The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.

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