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Modeling And Simulation Of High-Field, High-Temperature Sic Devices, Sanjay Pathak

Electrical & Computer Engineering Theses & Dissertations

With superior properties such as a large band gap, high thermal conductivity, and large electron drift velocity, SiC is expected to give a new dimension to high power, high temperature electronic devices used in power applications, microwave circuits, and for the space and automobile industries. SiC possesses an inherent advantage over its other large bandgap competitors in terms of inherited processing and device technology from Si. However, there is inadequate understanding of SiC device and its parameters. Simple extrapolations from Si are known to be inadequate. The aim of this dissertation, therefore. is to produce better understanding of SiC devices …