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Benefits Of Considering More Than Temperature Acceleration For Gan Hemt Life Testing, Ronald A. Coutu Jr., Robert A. Lake, Bradley D. Christiansen, Eric R. Heller, Christopher A. Bozada, Brian S. Poling, Glen D. Via, James P. Theimer, Stephen E. Tetlak, Ramakrishna Vetury, Jeffrey B. Shealy
Benefits Of Considering More Than Temperature Acceleration For Gan Hemt Life Testing, Ronald A. Coutu Jr., Robert A. Lake, Bradley D. Christiansen, Eric R. Heller, Christopher A. Bozada, Brian S. Poling, Glen D. Via, James P. Theimer, Stephen E. Tetlak, Ramakrishna Vetury, Jeffrey B. Shealy
Faculty Publications
The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and …