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Full-Text Articles in Engineering
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Bradley Minch
A novel chemoreceptive neuron MOS (CνMOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated CνMOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our …
Silicon Synaptic Adaptation Mechanisms For Homeostasis And Contrast Gain Control, Shih-Chii Liu, Bradley Minch
Silicon Synaptic Adaptation Mechanisms For Homeostasis And Contrast Gain Control, Shih-Chii Liu, Bradley Minch
Bradley Minch
We explore homeostasis in a silicon integrate-and-fire neuron. The neuron adapts its firing rate over time periods on the order of seconds or minutes so that it returns to its spontaneous firing rate after a sustained perturbation. Homeostasis is implemented via two schemes. One scheme looks at the presynaptic activity and adapts the synaptic weight depending on the presynaptic spiking rate. The second scheme adapts the synaptic"threshold" depending on the neuron's activity. The threshold is lowered if the neuron's activity decreases over a long time and is increased for prolonged increase in postsynaptic activity. The presynaptic adaptation mechanism models the …
Construction And Transformation Of Multiple-Input Translinear Element Networks, Bradley Minch
Construction And Transformation Of Multiple-Input Translinear Element Networks, Bradley Minch
Bradley Minch
We present a simple algorithmic procedure for constructing a multiple-input translinear element (MITE) network from a translinear-loop equation. We also give a number of MITE-network transformations that alter the structure of the MITE network without altering the translinear-loop equation that it embodies. The results that we establish in this paper serve as foundations for the synthesis of both static and dynamic MITE networks from high-level specifications.
Creating Musical Variation, Diana Dabby
Creating Musical Variation, Diana Dabby
Diana Dabby
Inspiration for composition may come from natural sounds, chance, and methods based on chaos theory.
Science And Engineering In Knowledge Representation And Reasoning, Lynn Stein
Science And Engineering In Knowledge Representation And Reasoning, Lynn Stein
Lynn Andrea Stein
As a field, knowledge representation has often been accused of being off in a theoretical no-man's land, removed from, and largely unrelated to, the central issues in AI. This article argues that recent trends in KR instead demonstrate the benefits of the interplay between science and engineering, a lesson from which all AI could benefit. This article grew out of a survey talk on the Third International Conference on Knowledge Representation and Reasoning (KR-92) (Nebel, Rich, and Swartout 1992) that I presented at the Thirteenth International Joint Conference on Artificial Intelligence (IJCAI-93).
Rethinking Cs101: Or, How Robots Revolutionize Introductory Computer Programming, Lynn Stein
Rethinking Cs101: Or, How Robots Revolutionize Introductory Computer Programming, Lynn Stein
Lynn Andrea Stein
Introductory computer science education is entrenched in an outdated computational model. Although it corresponds neither to our computing environments nor to our work, we insist on teaching our introductory students computation-as-calculation, a mathematical problem-solving view of the role of the computer program. We can dramatically improve this situation -- and, as a corollary, all of undergraduate computer science -- by focusing on the kind of dynamic, interactive, inherently parallel computation that occurs in spreadsheets and video games, web applications and robots.
Building Brains For Bodies, Lynn Stein, Rodney Brooks
Building Brains For Bodies, Lynn Stein, Rodney Brooks
Lynn Andrea Stein
We describe a project to capitalize on newly available levels of computational resources in order to understand human cognition. We are building an integrated physical system including vision, sound input and output, and dextrous manipulation, all controlled by a continuously operating large scale parallel MIMD computer. The resulting system will learn to "think" by building on its bodily experiences to accomplish progressively more abstract tasks. Past experience suggests that in attempting to build such an integrated system we will have to fundamentally change the way artificial intelligence, cognitive science, linguistics, and philosophy think about the organization ofintelligence. We expect to …
Skeptical Inheritance: Computing The Intersection Of Credulous Extensions, Lynn Stein
Skeptical Inheritance: Computing The Intersection Of Credulous Extensions, Lynn Stein
Lynn Andrea Stein
Ideally skeptical inheritance supports exactly those inferences true in every credulous extension of an inheritance hierarchy. We provide a formal definition of ideally skeptical inheritance. We show that two path-based approaches fail to capture ideally skeptical inheritance, and that there are inheritance hierarchies for which there are more always-true inferences than always-supported paths. We describe an ATMS-like scheme that computes ideally skeptical inheritance and represents hierarchical dependencies using a limited form of Boolean satisfiability. Finally, we demonstrate a preemption (specificity) strategy for which ideally skeptical inheritance is polynomial time computable.
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Sherra E. Kerns
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Sherra E. Kerns
The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
A Polycrystalline Diamond Thin Film Based Hydrogen Sensor, David Kerns, W Kang, Y Gurbuz, J Davidson
A Polycrystalline Diamond Thin Film Based Hydrogen Sensor, David Kerns, W Kang, Y Gurbuz, J Davidson
David V. Kerns
A new microelectronic gas sensor utilizing polycrystallinediamondfilm in conjunction with a catalytic metal has been developed for hydrogen detection. The sensor is fabricated in a layered Pd/i-diamond/p-diamond metal-insulator-semiconductor (MIS) Schottky-diode configuration on a tungsten substrate. The performance of the sensor for H2 detection has been examined in the temperature range 27-300°C. The analysis of the steady-state reaction kinetics has confirmed that the hydrogen adsorption process is responsible for the barrier-height change in the diamond-based MIS Schottky diode. The use ofdiamond-film technology opens the door to the development of a microelectronic gas sensor that can operate at a wider and …
A New Hydrogen Sensor Using A Polycrystalline Diamond-Based Schottky Diode, David Kerns, W Kang, Y Gurbuz, J Davidson
A New Hydrogen Sensor Using A Polycrystalline Diamond-Based Schottky Diode, David Kerns, W Kang, Y Gurbuz, J Davidson
David V. Kerns
Anew hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond inconjunction with palladium(Pd) metal has been developed. The device isfabricated in a layered Pd/undoped diamond/p-doped diamond Schottkydiode configuration. Hydrogensensing characteristics of the device have been examined in termsof sensitivity, linearity,response rate, and response time as a functionof temperature and hydrogen partial pressure. Hydrogen adsorption activation energyis investigated in the temperature range from 27 to 85°C.Analysis of the steady-state reaction kinetics usingthe I-V method confirmthat the hydrogen adsorption process is responsible for the barrierheight change in the diamondSchottky diode. The ability to fabricatediamond-based hydrogen sensor on a variety of substrates makes thedevice …
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
David V. Kerns
The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode With Catalyzed Tin Oxide Electrode, David Kerns, Y Gurbuz, W Kang, J Davidson
A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode With Catalyzed Tin Oxide Electrode, David Kerns, Y Gurbuz, W Kang, J Davidson
David V. Kerns
Anovel microelectronic device utilizing the gas sensing properties of tinoxide SnOx and electrical properties of plasma enhanced chemical vapor deposited (PECVD) diamondfilm for oxygengas sensing at higher and wide temperature range is presented in this paper. The sensor is fabricated as a layer of catalyst/SnOx(adsorptive oxide)/i(intrinsic)-diamond/p+-diamond CAIS structure. The performance of the new microelectronic gassensor has demonstrated a large sensitivity to oxygengas. The response is reproducible and repeatable. Activation energy of oxygen adsorption by the new microelectronic gassensoris low. The sensor has also indicated CO detection in air ambient.
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
David V. Kerns
Electron field emission from an array of micro-patterned monolithic diamond tips with varying sp2 content has been systematically investigated. The experimental results show that the field emission characteristics can be improved and the turn-on electric field can be reduced more than 50% by increasing sp2 content. Two hypotheses are proposed as an explanation of the effect of sp2 content on the field emission characteristics of diamond tips: the lowering of the work function due to defect-induced band generated bysp2 content in the diamond lattice and an increase in the field enhancement factor due to embedded sp2–diamond–sp2 cascaded microstructures.
A Novel Low-Field Electron-Emission Polycrystalline Diamond Microtip Array For Sensor Applications, David Kerns, W Kang, J Davidson, Q Li, J Xu, D Kinser
A Novel Low-Field Electron-Emission Polycrystalline Diamond Microtip Array For Sensor Applications, David Kerns, W Kang, J Davidson, Q Li, J Xu, D Kinser
David V. Kerns
Electronfieldemission from an array of patterned pyramids of polycrystalline diamond has been investigated for microsensor applications. Selective deposition and molding of a polycrystalline diamondfilm in a silicon cavity mold and subsequent creation of a freestanding polycrystalline diamond diaphragm with diamond pyramidal microtips has been achieved. The processing techniques are compatible with IC and micromachining technologies. High current emission from the patterned diamond microtip arrays is obtained at low electric fields. Field emission for these diamond microtips exhibits significant enhancement in total emission current compared to silicon emitters. Moreover, field emission from patterned polycrystalline diamond pyramidal-tip arrays is unique in that …
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
David V. Kerns
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
Novel Classes Of Minimal Delay And Low Papr Rate 1/2 Complex Orthogonal Designs, Sarah Spence Adams, James Davis, Nathaniel Karst, Mathav Murugan, Bryce Lee, Caitlin Greeley, Matthew Crawford
Novel Classes Of Minimal Delay And Low Papr Rate 1/2 Complex Orthogonal Designs, Sarah Spence Adams, James Davis, Nathaniel Karst, Mathav Murugan, Bryce Lee, Caitlin Greeley, Matthew Crawford
Sarah Spence Adams
Complex orthogonal designs (CODs) of rate 1/2 have been considered recently for use in analog transmissions and as an alternative to maximum rate CODs due to the savings in decoding delay as the number of antennas increases. While algorithms have been developed to show that an upper bound on the minimum decoding delay for rate 1/2 CODs with n=2m-1 or n=2m columns is ν(n) = 2m-1 or ν(n) = 2m, depending on the parity of n modulo 8, it remains open to determine the exact minimum delay. This paper shows that this bound ν(n) is also a lower bound on …
On Transeiver Signal Linearization And The Decoding Delay Of Maximum Rate Complex Orthogonal Space-Time Block Codes, Sarah Spence Adams, Nathaniel Karst, Mathav Murugan, Tadeusz Wysocki
On Transeiver Signal Linearization And The Decoding Delay Of Maximum Rate Complex Orthogonal Space-Time Block Codes, Sarah Spence Adams, Nathaniel Karst, Mathav Murugan, Tadeusz Wysocki
Sarah Spence Adams
Complex orthogonal designs (CODs) have been successfully implemented in wireless systems as complex orthogonal space-time block codes (COSTBCs). Certain properties of the underlying CODs affect the performance of the codes. In addition to the main properties of a COD's rate and decoding delay, a third consideration is whether the COD can achieve transceiver signal linearization, a property that facilitates practical implementation by, for example, significantly simplifying the receiver structure for iterative decoding. It has been shown that a COD can achieve this transceiver signal linearization if the nonzero entries in any given row of the matrix are either all conjugated …
Implementing The Lorenz Oscillator With Translinear Elements, Kofi Odame, Bradley Minch
Implementing The Lorenz Oscillator With Translinear Elements, Kofi Odame, Bradley Minch
Bradley Minch
Nonlinear processing is often more suitable than the traditional linear approach is for analyzing biological signals. Unfortunately, digital nonlinear operations are computationaly expensive. In contrast, a large variety of nonlinear operations can efficiently be implemented in analog electronics, operating at real-time speeds. The low level of accuracy generally associated with analog processing is not a concern in this scenario, as biological signals themselves typically have low signal-to-noise ratios. One challenge of analog processing is in its apparently- ad hoc design, and the fact that there is very little wide-spread knowledge of systematically implementing analog electronics to perform arbitrary nonlinear computations. …
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …