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Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look

Physics Faculty Publications

1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×10¹⁷ cm^-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (E_C-0.045 eV) and E2 (E_C-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC-0.15 eV is produced at a much higher rate than that of E1 and E2.

Alphonso L. Smith Interview, College Of Science And Mathematics, Wright State University, Alyce Earl Jenkins, Alphonso L. Smith

Profiles of African-Americans: Their Roles in Shaping Wright State University

Alyce Jenkins interviewed Alphonso L. Smith, Assistant Dean for the College of Science and Mathematics at Wright State University on June 3, 1992. In the interview Smith discussed his arrival at Wright State, his career as a faculty member there, and more.

1992-1994 Wright State University Graduate Course Catalog, Wright State University

Browse All Course Catalogs

This is a Wright State University graduate course catalog from 1992-1994.

Inverse Problems For Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity, Weifu Fang, Ellis Cumberbatch

Mathematics and Statistics Faculty Publications

Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.

Native Donors And Acceptors In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley

Physics Faculty Publications

Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations N_D=9.9×10¹⁹ and N_A=7.9×10¹⁸ cm⁻³, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of N_D over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.

Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove

Physics Faculty Publications

A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive layer significantly reduces the free‐electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual E_C−0.7 eV surface states are absent, (2) a dense donor near E_C−0.4 eV exists or (3) a high donor interface charge (∼5×10¹² cm⁻²) is present. Any of these conclusions constitutes an important new aspect of low‐temperature MBE GaAs.

Algorithms For Structural Schema Integration, James Geller, Ashish Mehra, Yehoshua Perl, Erich Neuhold, Amit P. Sheth

Kno.e.sis Publications

Current view and schema integration methodologies are driven by semantic considerations, and allow integration of objects only if that is valid from semantic and structural viewpoints. We had introduced a new integration technique called structural integration. It permits integration of objects that have structural similarities, even if they differ semantically. This technique uses the object-oriented Dual Model which separates the representation of structure and semantics.

In this paper we introduce algorithms for structural integration. We apply these algorithms to integrate two views of a large university database schema which had significant structural similarities but differed semantically.

Board Of Trustees Meeting Minutes, May 27-28, 1992

Board of Trustees Minutes

Minutes from the Wright State University Board of Trustees Meeting held on May 27-28, 1992.

The Guardian, May 21, 1992, Wright State University Student Body

The Guardian Student Newspaper

Sixteen page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look

Physics Faculty Publications

The localized vibrational modes (LVMs) of silicon donor (Si_Ga) and aluminum isovalent (Al_Ga) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the Si_Ga LVMs in GaAs layers …

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 5, May 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A six page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

Incorporation Of Silicon And Aluminum In Low-Temperature Molecular-Beam Epitaxial Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, Joseph Hemsky

Physics Faculty Publications

The localized vibrational modes (LVMs) of silicon donor (Si_Ga) and aluminum isovalent (Al_Ga) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the Si_Ga LVMs in GaAs layers …

Finite-Dimensional Approximations Of Unstable Infinite-Dimensional Systems, G. Gu, P. P. Khargonekar, E. B. Lee, Pradeep Misra

Electrical Engineering Faculty Publications

This paper studies approximation of possibly unstable linear time-invariant infinite-dimensional systems. The system transfer function is assumed to be continuous on the imaginary axis with finitely many poles in the open right half plane. A unified approach is proposed for rational approximations of such infinite-dimensional systems. A procedure is developed for constructing a sequence of finite-dimensional approximants, which converges to the given model in the L infinity norm under a mild frequency domain condition. It is noted that the proposed technique uses only the FFT and singular value decomposition algorithms for obtaining the approximations. Numerical examples are included to illustrate …

The Guardian, April 09, 1992, Wright State University Student Body

The Guardian Student Newspaper

Sixteen page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

The Guardian, April 02, 1992, Wright State University Student Body

The Guardian Student Newspaper

Twenty page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 4, April 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

Board Of Trustees Meeting Minutes, March 30-31, 1992

Board of Trustees Minutes

Minutes from the Wright State University Board of Trustees Meeting held on March 30-31, 1992.

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 3, March 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

The Guardian, February 13, 1992, Wright State University Student Body

The Guardian Student Newspaper

Twenty page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

Board Of Trustees Meeting Minutes, February 4-5, 1992

Board of Trustees Minutes

Minutes from the Wright State University Board of Trustees Meeting held on February 4-5, 1992.

Academic Council Meeting Agenda And Minutes, February 3, 1992, Gregory Bernhardt

Faculty Senate Minutes and Agendas

Agenda and minutes from the Wright State University Academic Council Meeting held on February 3, 1992.

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 2, February 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

An eight page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

Electron-Paramagnetic-Resonance Study Of Gaas Grown By Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, C. E. Stutz

Physics Faculty Publications

Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3×1018 cm−3 ionized AsGa defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T≳500 °C.

The Guardian, January 23, 1992, Wright State University Student Body

The Guardian Student Newspaper

Sixteen page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

The Guardian, January 09, 1992, Wright State University Student Body

The Guardian Student Newspaper

Sixteen page issue of the guardian, the official student-run newspaper for wright state university. the guardian has been published regularly since march of 1965.

On The Asymptotic Behavior And Radial Symmetry Of Positive Solutions Of Semilinear Elliptic Equations In Rn. I. Asymptotic Behavior, Yi Li, Wei-Ming Ni

Mathematics and Statistics Faculty Publications

No abstract provided.

Wright State University College Of Engineering And Computer Science Bits And Pcs Newsletter, Volume 8, Number 1, January 1992, College Of Engineering And Computer Science, Wright State University

BITs and PCs Newsletter

A ten page newsletter created by the Wright State University College of Engineering and Computer Science that addresses the current affairs of the college.

Executing Multidatabase Transactions, Mansoor Ansari, Marek Rusinkiewicz, Linda Ness, Amit P. Sheth

Kno.e.sis Publications

In a multidatabase environment, the traditional transaction model has been found to be too restrictive. Therefore, several extended transaction models have been proposed in which some of the requirements of transaction, such as isolation or atomicity, are optional. The authors describe one of such extensions, the flexible transaction model and discuss the scheduling of transactions involving multiple autonomous database systems managed by heterogeneous DBMS.

The scheduling algorithm for flexible transactions is implemented using L.0, a logically parallel language which provides a framework for concisely specifying the multidatabase transactions and for scheduling them. The key aspects of a flexible transaction specification, …

Boundary Velocity Control Of Incompressible-Flow With An Application To Viscous Drag Reduction, Max D. Gunzberger, Lisheng Hou, Tom Svobodny

Mathematics and Statistics Faculty Publications

An optimal boundary control problem for the Navier-Stokes equations is presented. The control is the velocity on the boundary, which is constrained to lie in a closed, convex subset of H^1/2 of the boundary. A necessary condition for optimality is derived. Computations are done when the control set is actually finite-dimensional, resulting in all application to viscous drag reduction.

Uniqueness Of Radial Solutions Of Semilinear Elliptic Equations, Man Kam Kwong, Yi Li

Mathematics and Statistics Faculty Publications

E. Yanagida recently proved that the classical Matukuma equation with a given exponent has only one finite mass solution. We show how similar ideas can be exploited to obtain uniqueness results for other classes of equations as well as Matukuma equations with more general coefficients.