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Full-Text Articles in Science and Technology Studies
Large Piezoelectric Coefficient And Ferroelectric Nanodomain Switching In Ba(Ti0.80zr0.20)O3-0.5(Ba0.70ca 0.30)Tio3 Nanofibers And Thin Films, A Jalalian, A Grishin, Xiaolin Wang, Zhenxiang Cheng, S X. Dou
Large Piezoelectric Coefficient And Ferroelectric Nanodomain Switching In Ba(Ti0.80zr0.20)O3-0.5(Ba0.70ca 0.30)Tio3 Nanofibers And Thin Films, A Jalalian, A Grishin, Xiaolin Wang, Zhenxiang Cheng, S X. Dou
Shi Xue Dou
Currently available low-dimensional piezoelectric materials show a low piezoelectric coefficient d33 of merely 100 pm V-1 with Pb(Zr, Ti)O3-based materials at the high end. Here, we report very large piezoelectricity in Ba(Ti0.80Zr0.20)O 3-0.5(Ba0.70Ca0.30)TiO3 (BTZ-0.5BCT) lead-free nanostructures sintered as thin films (d33 = 140 pm V -1) and nanofibers (d33 = 180 pm V-1). The influences of lateral size, geometry, and the clamping effect on the piezoelectric performance were investigated for both thin films and nanofibers. Combining a high piezoelectric coefficient with environmental benefits, the BTZ-0.5BCT nanostructures provide the superior functions sought for highly efficient piezoelectric devices and electromechanical systems. 2014 …
Large Networks Of Vertical Multi-Layer Graphenes With Morphology-Tunable Magnetoresistance, Zengji Yue, Igor Levchenko, Shailesh Kumar, Donghan Seo, Xiaolin Wang, S X. Dou, Kostya Ken Ostrikov
Large Networks Of Vertical Multi-Layer Graphenes With Morphology-Tunable Magnetoresistance, Zengji Yue, Igor Levchenko, Shailesh Kumar, Donghan Seo, Xiaolin Wang, S X. Dou, Kostya Ken Ostrikov
Shi Xue Dou
We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our …