Physics Commons^™

Tunneling Anisotropic Magnetoresistance In A Magnetic Tunnel Junction With Half-Metallic Electrodes, John D. Burton, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first-principles density functional calculations of the TAMR effect in magnetic tunnel junctions with La_0.7Sr_0.3MnO₃ (LSMO) electrodes and a SrTiO₃ (STO) tunneling barrier. We find an ∼500% difference in resistance between magnetization in the plane and out of the plane. This large TAMR effect originates from the half-metallic nature of LSMO: When magnetization is out of …

Functional Two-Dimensional Electronic Gases At Interfaces Of Oxide Heterostructures, Yong Wang

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO₃/SrTiO₃ has unique properties that are promising for applications in all-oxide electronic devices. In this dissertation, we focus on understanding and predicting novel properties of the 2DEG by performing first-principles electronic calculations within the frame work of density-functional theory (DFT).

The effects of polarization in all-oxide heterostructures incorporating different ferroelectric constituents, such as KNbO₃/ATiO₃ (A = Sr, Ba, Pb), are investigated. It is found that screening charge at the interface that counteracts the depolarizing electric field in the ferroelectric material significantly changes the …