Physics Commons^™

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se₂solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se₂thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se₂/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF₂. A key to high efficiency is improved adhesion between the Cu(InAl)Se₂ and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se₂ to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se₂ with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …