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Metals

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Full-Text Articles in Physics

Surface Plasmon Induced Enhancement In Selective Laser Melting Processes, Dentcho A. Genov, Raj K. Vinnakota Jun 2019

Surface Plasmon Induced Enhancement In Selective Laser Melting Processes, Dentcho A. Genov, Raj K. Vinnakota

Dentcho Genov

Purpose
Selective laser melting (SLM) is an advanced rapid prototyping or additive manufacturing technology that uses high power density laser to fabricate metal/alloy components with minimal geometric constraints. The SLM process is multi-physics in nature and its study requires development of complex simulation tools. The purpose of this paper is to study – for the first time, to the best of the authors’ knowledge – the electromagnetic wave interactions and thermal processes in SLM based dense powder beds under the full-wave formalism and identify prospective metal powder bed particle distributions that can substantially improve the absorption rate, SLM volumetric deposition …

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Combinatorial Computational Chemistry Approach To The Design Of Metal Oxide Electronics Materials, B. Rodion, Salai Ammal, Y. Inaba, Y. Oumi, S. Takami, M. Kubo, A. Miyamoto, M. Kawasaki, M. Yoshimoto, H. Koinuma May 2015

Combinatorial Computational Chemistry Approach To The Design Of Metal Oxide Electronics Materials, B. Rodion, Salai Ammal, Y. Inaba, Y. Oumi, S. Takami, M. Kubo, A. Miyamoto, M. Kawasaki, M. Yoshimoto, H. Koinuma

Salai C. Ammal

Combinatorial chemistry has been developed as an experimental method where it is possible to synthesize hundreds of samples all at once and examine their properties. Recently, we introduced the concept of combinatorial approach to computational chemistry for material design and proposed a new method called `a combinatorial computational chemistry'. In this approach, the effects of large number of dopants, substrates, and buffer layers on the structures, electronic states, and properties of metal oxide electronics material is estimated systematically using computer simulations techniques, in order to predict the best dopant, substrate, and buffer layer for each metal oxide electronics materials.

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