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Articles 1 - 8 of 8
Full-Text Articles in Physics
Magnet Traveling Through A Conducting Pipe: A Variation On The Analytical Approach, Benjamin Irvine, Matthew Kemnetz, Asim Gangopadhyaya, Thomas Ruubel
Magnet Traveling Through A Conducting Pipe: A Variation On The Analytical Approach, Benjamin Irvine, Matthew Kemnetz, Asim Gangopadhyaya, Thomas Ruubel
Asim Gangopadhyaya
We present an analytical study of magnetic damping. In particular, we investigate the dynamics of a cylindrical neodymium magnet as it moves through a conducting tube. Owing to the very high degree of uniformity of the magnetization for neodymium magnets, we are able to provide completely analytical results for the electromotive force generated in the pipe and the consequent retarding force. Our analytical expressions are shown to have excellent agreement with experimental observations.
Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Jason R. Hattrick-Simpers
A high-throughput high-sensitivity optical technique for measuringmagnetostriction of thin-film composition-spread samples has been developed. It determines the magnetostriction by measuring the induced deflection of micromachined cantilever unimorph samples. Magnetostrictionmeasurements have been performed on as-deposited Fe–Ga and Fe–Ga–Al thin-film composition spreads. The thin-film Fe–Ga spreads display a similar compositional variation of magnetostriction as bulk. A previously undiscovered peak in magnetostriction at low Ga content was also observed and attributed to a maximum in the magnetocrystalline anisotropy. Magnetostrictive mapping of the Fe–Ga–Al ternary system reveals the possibility of substituting up to 8at.%Al in Fe70Ga30 without significant degradation of magnetostriction.
Demonstration Of Magnetoelectric Scanning Probe Microscopy, Jason R. Hattrick-Simpers, Liyang Dai, Manfred Wuttig, Ichiro Takeuchi, Eckhard Quandt
Demonstration Of Magnetoelectric Scanning Probe Microscopy, Jason R. Hattrick-Simpers, Liyang Dai, Manfred Wuttig, Ichiro Takeuchi, Eckhard Quandt
Jason R. Hattrick-Simpers
A near-field room temperature scanning magnetic probe microscope has been developed using a laminated magnetoelectric sensor. The simple trilayer longitudinal-transverse mode sensor, fabricated using Metglas as the magnetostrictive layer and polyvinylidene fluoride as the piezoelectric layer, shows an ac field sensitivity of 467±3μV∕Oe in the measured frequency range of 200Hz–8kHz. The microscope was used to image a 2mm diameter ring carrying an ac current as low as 10−5A. ac fields as small as 3×10−10T have been detected.
Magnetic Fields In An Expanding Universe, David Kastor, Jennie Traschen
Magnetic Fields In An Expanding Universe, David Kastor, Jennie Traschen
David Kastor
We find a solution to 4D Einstein-Maxwell theory coupled to a massless dilaton field describing a Melvin magnetic field in an expanding universe with 'stiff matter' equation of state parameter w=+1. As the universe expands, magnetic flux becomes more concentrated around the symmetry axis for dilaton coupling a<1/3√ and more dispersed for a>1/3√. An electric field circulates around the symmetry axis in the direction determined by Lenz's law. For a=0 the magnetic flux through a disk of fixed comoving radius is proportional to the proper area of the disk. This result disagrees with the usual expectation based on a test magnetic field that this …
Molecular Beam Epitaxy Of High Mobility In0.75Ga0.25As For Electron Spin Transport Applications, Paul J. Simmonds, S. N. Holmes, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie, M. Pepper
Molecular Beam Epitaxy Of High Mobility In0.75Ga0.25As For Electron Spin Transport Applications, Paul J. Simmonds, S. N. Holmes, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie, M. Pepper
Paul J. Simmonds
The authors describe the molecular beam epitaxy of relaxed, nominally undoped In0.75Ga0.25As–In0.75Al0.25As quantum well structures grown on InP substrates. The maximum two-dimensional electron density is 2 × 1011cm−2, with a peak mobility of 2.2 × 105cm2 V−1s−1 at 1.5K. In high magnetic field, the electron g-factor was shown to have a magnitude of 9.1 ± 0.1 at Landau-level filling factor of 4. The Rashba coefficient, determined from the analysis of the magnetoresistance at high Landau-level filling factor (>12), …
Spin-Orbit Coupling In An In0.52Ga0.48As Quantum Well With Two Populated Subbands, P. J. Simmonds, S. N. Holmes, H. E. Beere, D. A. Ritchie
Spin-Orbit Coupling In An In0.52Ga0.48As Quantum Well With Two Populated Subbands, P. J. Simmonds, S. N. Holmes, H. E. Beere, D. A. Ritchie
Paul J. Simmonds
Structural inversion asymmetry controls the magnitude of Rashba spin-orbit coupling in the electron energy spectrum of a narrow band gap semiconductor. We investigate this effect for a series of two-dimensional electron gases in In0.52Ga0.48As quantum wells, surrounded by In0.52Al0.48As barriers, where either one or two electric subbands are populated. Structural inversion asymmetry does not exist at low carrier density while at higher carrier densities (above (4–5) × 1011 cm−2), a finite spin splitting is observed. The spin orbit coupling coefficients (α) are determined from the power spectrum …
Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Quantum Transport In In0.75Ga0.25As Quantum Wires, P. J. Simmonds, F. Sfigakis, H. E. Beere, D. A. Ritchie, M. Pepper, D. Anderson, G. A.C. Jones
Paul J. Simmonds
In addition to quantized conductance plateaus at integer multiples of 2e2/h, the differential conductance G=dI/dV shows plateaus at 0.25(2e2/h) and 0.75(2e2/h) under applied source-drain bias in In0.75Ga0.25As quantum wires defined by insulated split gates. This observation is consistent with a spin-gap model for the 0.7 structure. Using a tilted magnetic field to induce Landau level crossings, the g factor was measured to be ~9 by the coincidence method. This material, with a mobility of 1.8×105 cm …
Low‐Temperature Phase Diagram Of Ybbipt, R. Movshovich, A. Lacerda, Paul C. Canfield, J. D. Thompson, Z. Fisk
Low‐Temperature Phase Diagram Of Ybbipt, R. Movshovich, A. Lacerda, Paul C. Canfield, J. D. Thompson, Z. Fisk
Paul C. Canfield
Resistivity measurements are reported on the cubic heavy‐fermion compound YbBiPt at ambient and hydrostatic pressures to ≊19 kbar and in magnetic fields to 1 T. The phase transition at T c =0.4 K is identified by a sharp rise in resistivity. That feature is used to build low‐temperature H‐T and P‐Tphase diagrams. The phase boundary in the H‐T plane follows the weak‐coupling BCS expression remarkably well from T c to T c /4, while small hydrostatic pressure of ≊1 kbar suppresses the low‐temperature phase entirely. These effects of hydrostatic pressure and magnetic field on the phase transition are consistent with …