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Photoelectric Injection Amplification Of Al–Al2o3–P-Cdte–Mo Structures At Low Bias Voltages, A K. Uteniyazov

Karakalpak Scientific Journal

The results of studies of photoelectric injection enhancement of the Al–Al₂O₃–p-CdTe –Mo structure upon application of low bias voltages. It has been shown that the studied Al-Al₂O₃–p-CdTe-Mo structure under can be represented as a n⁺-p-R_ом structure with a long base. Conducted researches show that Al-Al₂O₃–p-CdTe-Mo structure has unique properties. It has very high photocurrent and photosensitivity at both direct and reverse dias voltage under even small bias voltage (up to 500mV).