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Full-Text Articles in Physics
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Engineering Rare-Earth Based Color Centers In Wide Bandgap Semiconductors For Quantum And Nanoscale Applications, Gabriel I. López-Morales
Engineering Rare-Earth Based Color Centers In Wide Bandgap Semiconductors For Quantum And Nanoscale Applications, Gabriel I. López-Morales
Dissertations, Theses, and Capstone Projects
For many years, atomic point-defects have been readily used to tune the bulk properties of solid-state crystalline materials, for instance, through the inclusion of elemental impurities (doping) during growth, or post-processing treatments such as ion bombardment or high-energy irradiation. Such atomic point-defects introduce local ‘incompatible’ chemical interactions with the periodic atomic arrangement that makes up the crystal, resulting for example in localized electronic states due to dangling bonds or excess of electrons. When present in sufficient concentrations, the defects interact collectively to alter the overall bulk properties of the host material. In the low concentration limit, however, point-defects can serve …
Electrical And Optical Characterization Of Two-Dimensional Semiconductors Using Ultrafast Spectroscopy, Pan Adhikari
Electrical And Optical Characterization Of Two-Dimensional Semiconductors Using Ultrafast Spectroscopy, Pan Adhikari
All Dissertations
The emergence of two-dimensional (2D) layered materials provides unprecedented opportunities for studying excitonic physics due to the strong Coulomb interaction between the electron-hole pair. Because of the reduced dimensionality and weak dielectric screening, the exciton is stable at room temperature, unlike bulk semiconductors. The evolution from low to high carrier density for optical gain in 2D semiconductors involves insulating exciton gas, exciton condensation, co-existence of various excitonic complexes, electron-hole plasmas (EHPs), or electron-hole liquids (EHLs), leading to the Mott transition. Strong interaction among the excitons, such as exciton-exciton annihilation (EEA), serves as a hot-carrier generation. A bound exciton dissociates into …
Impact Of Proton And Neutron Irradiation On Carrier Transport Properties In Ga2o3, Andrew C. Silverman
Impact Of Proton And Neutron Irradiation On Carrier Transport Properties In Ga2o3, Andrew C. Silverman
Honors Undergraduate Theses
This project studies the properties of minority charge carriers in beta gallium oxide (β -Ga2O3). The behavior of minority carriers is of high importance as it greatly affects conduction and consequently device performance. Cathodoluminescence (CL) spectroscopy and EBIC (Electron Beam Induced Current) are the main experimental techniques used to study minority carrier behavior.
High energy radiation affects minority carrier properties through damage to the material and through the production of carrier traps that reduce the conductivity and mobility of the material. In this investigation, we study the effects of various kinds of high energy radiation on …