Physics Commons^™

The Role Of Partial Surface Charge Compensation In The Properties Of Ferroelectric And Antiferroelectric Thin Films, Elena Glazkova

USF Tampa Graduate Theses and Dissertations

Ferroelectric and antiferroelectric ultrathin films have attracted a lot of attention recently due to their remarkable properties and their potential to allow for device miniaturization in numerous applications. However, when the ferroelectric films are scaled down, it brings about an unavoidable depolarizing field. A partial surface charge compensation allows to control the residual depolarizing field and manipulate the properties of ultrathin ferroelectric films. In this dissertation we take advantage of atomistic first-principles-based simulations to expand our understanding of the role of the partial surface charge compensation in the properties of ferroelectric and antiferroelectric ultrathin films.

The application of our computational …

Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman

Alexei Gruverman Publications

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO₃ and Pb(Zr,Ti)O₃ films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO₃ thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO₃ films is …