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Energy Loss Of Ions Implanted In Mos Dielectric Films, Radhey Shyam

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Energy loss measurements of ions in the low kinetic energy regime have been made on as-grown SiO₂(170-190nm) targets. Singly charged Na+ ions with kinetic energies of 2-5 keV and highly charged ions Ar+Q (Q=4, 8 and 11) with a kinetic energy of 1 keV were used. Excitations produced by the ion energy loss in the oxides were captured by encapsulating the irradiated oxide under a top metallic contact. The resulting Metal-Oxide-Semiconductor (MOS) devices were probed with Capacitance-Voltage (C V) measurements and extracted the flatband voltages from the C-V curves. The C-V results for singly charged ion experiments reveal …