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Full-Text Articles in Physics
On-Chip Non-Reciprocal Optical Devices Based On Quantum Inspired Photonic Lattices, Ramy El-Ganainy, A. Eisfeld, Miguel Levy, Demetrios N. Christodoulides
On-Chip Non-Reciprocal Optical Devices Based On Quantum Inspired Photonic Lattices, Ramy El-Ganainy, A. Eisfeld, Miguel Levy, Demetrios N. Christodoulides
Department of Physics Publications
We propose integrated optical structures that can be used as isolators and polarization splitters based on engineered photonic lattices. Starting from optical waveguide arrays that mimic Fock space (quantum state with a well-defined particle number) representation of a non-interacting two-site Bose Hubbard Hamiltonian, we show that introducing magneto-optic nonreciprocity to these structures leads to a superior optical isolation performance. In the forward propagation direction, an input TM polarized beam experiences a perfect state transfer between the input and output waveguide channels while surface Bloch oscillations block the backward transmission between the same ports. Our analysis indicates a large isolation ratio …
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
Simulation Of Charge Transport In Multi-Island Tunneling Devices: Application To Disordered One-Dimensional Systems At Low And High Biases, Madhusudan A. Savaikar, Douglas R. Banyai, Paul Bergstrom, John A. Jaszczak
Department of Physics Publications
Although devices have been fabricated displaying interesting single-electron transport characteristics, there has been limited progress in the development of tools that can simulate such devices based on their physical geometry over a range of bias conditions up to a few volts per junction. In this work, we present the development of a multi-island transport simulator, MITS, a simulator of tunneling transport in multi-island devices that takes into account geometrical and material parameters, and can span low and high source-drain biases. First, the capabilities of MITS are demonstrated by modeling experimentaldevices described in the literature, and showing that the simulated device …