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Articles 1 - 4 of 4
Full-Text Articles in Physics
Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni
Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni
Electronic Thesis and Dissertation Repository
In nanostructures (NSs), to acquire a fundamental understanding of the electronic states by studying the optical properties is inherently complicated. A widely used simplification to this problem comes about by developing a model for a small scale representation of types of NSs and applying it to a hierarchy of fabrication methods. However, this methodology fails to account for structural differences incurred by the fabrication method that lead to differences in the optical properties. Proper modelling is realized by first considering the proper range of experimental parameters individually as inputs to a theoretical model and applying the correct parameters to the …
Unmasking The Mysteries Of High-Mass X-Ray Binaries (Hmxbs): The Role Of The Electron Beam Ion Trap (Ebit), Carey L. Baxter, Greg Brown, Natalie Hell
Unmasking The Mysteries Of High-Mass X-Ray Binaries (Hmxbs): The Role Of The Electron Beam Ion Trap (Ebit), Carey L. Baxter, Greg Brown, Natalie Hell
Carey L Baxter
The Electron Beam Ion Trap (EBIT) uses a very narrow electron beam (~60μm) to excite and trap ions. X-ray emissions of the excited ions are then diffracted and analyzed. I studied specific spectral emission lines of ionized silicon. This data can be used as a point of reference for similar spectra measured by the satellite Chandra so that the Doppler shift due to wind around the accretion disks of High Mass X-ray Binaries (HMXBs) can be calculated. HMXBs are pairs of stars that are luminous in X-rays. They are composed of a donor star that gives up mass to an …
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.
Infraded Surface Plasmon Polaritons On Semiconductor, Semimetal And Conducting Polymer, Monas Shahzad
Infraded Surface Plasmon Polaritons On Semiconductor, Semimetal And Conducting Polymer, Monas Shahzad
Electronic Theses and Dissertations
Conductors with IR (infrared) plasma frequencies are potentially useful hosts of surface plasmon polaritons (SPPs) with subwavelength mode confinement for sensing applications. The underlying aim of this work is to identify such conductors that also have sharp SPP excitation resonances for biosensor applications at infrared (3-11 m) wavelengths, where biological analytes are strongly differentiated by their IR absorption spectra. In this work, various materials were investigated such as a heavily doped semiconductor, a semimetal, a conducting polymer and its composite. Heavily doped silicon was investigated by tuning its plasma frequency to the infrared region by heavily doping. The measured complex …