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Full-Text Articles in Physics

Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. S. Markiewicz, A. Bansil Apr 2012

Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. S. Markiewicz, A. Bansil

Bernardo Barbiellini

Relaxation energies for photoemission where an occupied electronic state is excited and for inverse photoemission where an empty state is filled are calculated within the density-functional theory with application to Nd₂₋ₓCeₓCuO₄. The associated relaxation energies are obtained by computing differences in total energies between the ground state and an excited state in which one hole or one electron is added into the system. The relaxation energies of f electrons are found to be of the order of several eV’s, indicating that f bands will appear substantially away from the Fermi energy (EF) in their spectroscopic images, even if these bands …


Emergence Of Multiple Fermi Surface Maps In Angle-Resolved Photoemission From Bi₂Sr₂Cacu₂O₈+Δ, M. C. Asensio, J. Avila, L. Roca, A. Tejeda, G. D. Gu, M. Lindroos, R. S. Markiewicz, A. Bansil Apr 2012

Emergence Of Multiple Fermi Surface Maps In Angle-Resolved Photoemission From Bi₂Sr₂Cacu₂O₈+Δ, M. C. Asensio, J. Avila, L. Roca, A. Tejeda, G. D. Gu, M. Lindroos, R. S. Markiewicz, A. Bansil

Robert Markiewicz

We report angle-resolved photoemission spectra (ARPES) for emission from the Fermi energy (EF) over a large area of the (kx,ky) plane using 21.2 and 32 eV photon energies in two distinct polarizations from an optimally doped single crystal of Bi₂Sr₂CaCu₂O₈₊δ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment, demonstrating that the ARPES matrix elements can produce a striking variety of Fermi surface maps, especially in the presence of secondary features arising from modulations of the underlying tetragonal system. Our analysis demonstrates how the energy and polarization …


Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. Markiewicz, A. Bansil Apr 2012

Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. Markiewicz, A. Bansil

Robert Markiewicz

Relaxation energies for photoemission where an occupied electronic state is excited and for inverse photoemission where an empty state is filled are calculated within the density-functional theory with application to Nd₂₋ₓCeₓCuO₄. The associated relaxation energies are obtained by computing differences in total energies between the ground state and an excited state in which one hole or one electron is added into the system. The relaxation energies of f electrons are found to be of the order of several eV’s, indicating that f bands will appear substantially away from the Fermi energy (EF) in their spectroscopic images, even if …


Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil Apr 2012

Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil

Robert Markiewicz

The Fermi surface (FS) of Bi₂Sr₂CaCu₂O₈₊δ (Bi2212) predicted by band theory displays Bi-related pockets around the (π,0) point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy (EF) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole doping the Bi-O bands drop below EF and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate …


Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil Apr 2012

Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil

Hsin Lin

The Fermi surface (FS) of Bi₂Sr₂CaCu₂O₈₊δ (Bi2212) predicted by band theory displays Bi-related pockets around the (π,0) point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy (EF) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole doping the Bi-O bands drop below EF and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate …


A Novel Direct Method Of Fermi Surface Determination Using Constant Initial Energy Angle-Scanned Photoemission Spectroscopy, M. Lindroos, A. Bansil Apr 2012

A Novel Direct Method Of Fermi Surface Determination Using Constant Initial Energy Angle-Scanned Photoemission Spectroscopy, M. Lindroos, A. Bansil

Arun Bansil

We show that a constant initial energy, angle-scanned (CIE-AS) photoemission spectrum for emission from the Fermi energy (EF) contains Fermi surface (FS) signatures which originate from density of states type indirect transitions. Such previously unrecognized FS features in a CIE-AS spectrum would provide a robust and straightforward means of determining Fermi surfaces. Furthermore, the associated photointensity should yield a new window on k⊥, dispersion related issues in materials. Extensive simulations of CIE-AS spectra from low index faces of Cu are presented within the framework of the one-step photoemission model in order to delineate the nature of these new spectral features.


Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil Apr 2012

Raising Bi-O Bands Above The Fermi Energy Level Of Hole-Doped Bi₂Sr₂Cacu₂O₈+Δ And Other Cuprate Superconductors, Hsin Lin, S. Sahrakorpi, R. S. Markiewicz, A. Bansil

Arun Bansil

The Fermi surface (FS) of Bi₂Sr₂CaCu₂O₈₊δ (Bi2212) predicted by band theory displays Bi-related pockets around the (π,0) point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy (EF) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole doping the Bi-O bands drop below EF and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate …


Special Directions For Brillouin-Zone Integration: Application To Density Of-States Calculations, R. Prasad, A. Bansil Apr 2012

Special Directions For Brillouin-Zone Integration: Application To Density Of-States Calculations, R. Prasad, A. Bansil

Arun Bansil

We present several large sets of special directions for cubic lattices. The question of accuracy obtainable in density-of-states and Fermi-energy evaluations in disordered alloys by using various direction sets is discussed. In this context, results on the simple cubic tight-binding band and on the model Hamiltonian for Cu are considered.


Electron Momentum Density In Disordered Muffin-Tin Cu1-Xnix In The Average-T-Matrix Approximation, P. E. Mijnarends, A. Bansil Apr 2012

Electron Momentum Density In Disordered Muffin-Tin Cu1-Xnix In The Average-T-Matrix Approximation, P. E. Mijnarends, A. Bansil

Arun Bansil

In an earlier article we discussed the formalism for evaluating the average electron-momentum density in a random binary alloy by using the average-t-matrix approximation to treat the disorder and muffin-tin potentials to represent the constituent atoms. The present paper considers the application of this formalism to Cu₁₋ₓNiₓ over a range of alloy compositions. The characteristic effects of disorder on the spectral momentum density 〈ρ(p,E)〉 are delineated. In discussing the momentum density 〈ρ(p)〉 we focus on how this quantity changes as x increases from 0 to 1 and the Ni d band develops from a virtual bound state below the Fermi …


Emergence Of Multiple Fermi Surface Maps In Angle-Resolved Photoemission From Bi₂Sr₂Cacu₂O₈+Δ, M. C. Asensio, J. Avila, L. Roca, A. Tejeda, G. D. Gu, M. Lindroos, R. S. Markiewicz, A. Bansil Apr 2012

Emergence Of Multiple Fermi Surface Maps In Angle-Resolved Photoemission From Bi₂Sr₂Cacu₂O₈+Δ, M. C. Asensio, J. Avila, L. Roca, A. Tejeda, G. D. Gu, M. Lindroos, R. S. Markiewicz, A. Bansil

Arun Bansil

We report angle-resolved photoemission spectra (ARPES) for emission from the Fermi energy (EF) over a large area of the (kx,ky) plane using 21.2 and 32 eV photon energies in two distinct polarizations from an optimally doped single crystal of Bi₂Sr₂CaCu₂O₈₊δ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment, demonstrating that the ARPES matrix elements can produce a striking variety of Fermi surface maps, especially in the presence of secondary features arising from modulations of the underlying tetragonal system. Our analysis demonstrates how the energy and polarization …


Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. S. Markiewicz, A. Bansil Apr 2012

Renormalization Of F Levels Away From The Fermi Energy In Electron Excitation Spectroscopies: Density-Functional Results For Nd2-Xcexcuo4, T. Jarlborg, B. Barbiellini, H. Lin, R. S. Markiewicz, A. Bansil

Arun Bansil

Relaxation energies for photoemission where an occupied electronic state is excited and for inverse photoemission where an empty state is filled are calculated within the density-functional theory with application to Nd₂₋ₓCeₓCuO₄. The associated relaxation energies are obtained by computing differences in total energies between the ground state and an excited state in which one hole or one electron is added into the system. The relaxation energies of f electrons are found to be of the order of several eV’s, indicating that f bands will appear substantially away from the Fermi energy (EF) in their spectroscopic images, even if these bands …