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Development Of A Fourier Transform Far Infrared (Ftfir) Spectrometer To Characterize Broadband Transmission Properties Of Common Materials In The Terahertz Region, William Paul Ford
Development Of A Fourier Transform Far Infrared (Ftfir) Spectrometer To Characterize Broadband Transmission Properties Of Common Materials In The Terahertz Region, William Paul Ford
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With sub-millimeter wave or terahertz devices becoming more readily available, there is interest in developing sensors in this region of the spectra. To support this interest, we have developed a Fourier Transform Far InfraRed (FTFIR) spectrometer to characterize broadband transmission and reflectance coefficients of materials. The spectrometer utilizes a broadband blackbody source, a Michelson interferometer, and silicon bolometer. The path difference in the Michelson is obtained using a linear stage and data acquisition and stage control were both implemented in a Labview programming environment. The details of the experimental setup and experimental results are presented in this thesis. The instrument …
Models Of Disordered Media And Predictions Of Associated Hydraulic Conductivity, L. Aaron Blank Jr.
Models Of Disordered Media And Predictions Of Associated Hydraulic Conductivity, L. Aaron Blank Jr.
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In the late 20th century there was a spill of Technetium in eastern Washington State at the US Department of Energy Hanford site. Resulting contamination of water supplies would raise serious health issues for local residents. Therefore, the ability to predict how these contaminants move through the soil is of great interest. The main contribution to contaminant transport arises from being carried along by flowing water. An important control on the movement of the water through the medium is the hydraulic conductivity, K, which defines the ease of water flow for a given pressure difference (analogous to the electrical conductivity). …
Electronic Properties Of Silicon-Based Nanostructures, Gian Giacomo Guzman-Verri
Electronic Properties Of Silicon-Based Nanostructures, Gian Giacomo Guzman-Verri
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We have developed a new unifying tight-binding theory that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp2s* and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the corresponding Si nanotubes follow the so-called Hamada's rule. Comparison to a recent ab initio calculation is made.