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Characterization Of Ultrathin Gate Dielectrics And Multilayer Charge Injection Barriers, Edwin M. Dons

Dissertations

Since the invention of the first integrated circuit, the semiconductor industry has distinguished itself by a phenomenally rapid pace of improvements in device performance. This trend of ever smaller and faster devices is a result of the ability to exponentially reduce feature sizes of integrated circuits, a trend commonly known as "scaling". A reduction of overall feature sizes requires a simultaneous reduction in the thickness of the gate dielectric, SiO₂, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a reevaluation of the continued usefulness of SiO₂ as the gate dielectric of choice for future applications. On the other hand, a thorough understanding of …