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Full-Text Articles in Physics
A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson
A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson
Electrical and Computer Engineering Faculty Publications
Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio …
Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson
Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson
Electrical and Computer Engineering Faculty Publications
A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.
Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.
Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.
Electrical and Computer Engineering Faculty Publications
The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by …
Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee
Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee
Electrical and Computer Engineering Faculty Publications
This project, which began with the desire to render into English a rather long tale by Bimal Kar about five years ago, eventually grew into a considerably more extended compilation of Bengali short stories by 10 of the most well-known practitioners of that art since the heyday of Rabindranath Tagore. The collection is limited in many ways, not the least of which being that no woman writer has been included, and that it contains only a baker's dozen stories (if we count Bonophool's micro-stories collectively as one ) — a number pitifully small considering the vast and prolific field of …
Angular Range For Reflection Of P-Polarized Light At The Surface Of An Absorbing Medium With Reflectance Below That At Normal Incidence, R. M.A. Azzam, Ericson E. Ugbo
Angular Range For Reflection Of P-Polarized Light At The Surface Of An Absorbing Medium With Reflectance Below That At Normal Incidence, R. M.A. Azzam, Ericson E. Ugbo
Electrical Engineering Faculty Publications
The range of incidence angle, 0 < φ < φe, over which p-polarized light is reflected at interfaces between transparent and absorbing media with reflectance below that at normal incidence is determined. Contours of constant φe in the complex plane of the relative dielectric constant ε are presented. A method for determining the real and imaginary parts of the complex refractive index, ε1/2 = n + jk, which is based on measuring φe and the pseudo-Brewster angle φpB, is viable in the domain of fractional optical constants, n, k < 1.
121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta
121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta
Electrical & Computer Engineering Faculty Publications
A vacuum ultraviolet (VUV) light source based on a high-pressure cylindrical dielectric barrier discharge (DBD) has been developed. Intense and spectrally clean Lyman-α line at 121.6 nm was obtained by operating a DBD discharge in neon with a small admixture of hydrogen. The spectrum, optical power, stability, and efficiency of the source were measured. The influence of the gas mixture and total gas pressure on the VUV intensity has been investigated. Maximum optical power of 3.2 W and spectral width 0.03 nm was achieved. Power stability of 2% for 100 h of operation has also been obtained. The newly developed …