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Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium with nitrogen from microwave plasma sources. The structure was confirmed by x-ray diffraction, electron diffraction, and elemental analysis. Two types of growth were observed: (i) dendritic crystals on the original melt surface, and (ii) hexagonal platelets adjacent to the In metal source on the upper edge of the crucible. The method does not involve a foreign substrate to initiate growth and is a potential alternative to the high-pressure techniques normally associated with bulk growth of indium nitride. The lattice parameters were a = 3.5366 ± 0.0005 angstrom and c = 5.7009 …
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Jeffrey Dyck
While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report …