Physics Commons^™

Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz

Physics Faculty Publications

Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×10¹⁶ cm⁻³ is believed to be related to the As_Ga‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.