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Articles 1 - 4 of 4
Full-Text Articles in Physics
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
All HMC Faculty Publications and Research
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.
Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene
Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene
All HMC Faculty Publications and Research
The kinetics of photoinduced defect formation in high-purity silicas has been studied by femtosecond transient absorption spectroscopy in the visible and ultraviolet. Band edge two-photon excitation produces singlet excitons which decay in 0.25 ps into defects with the absorption spectra of nonbridging oxygen hole centers (≡Si-O⋅) and silicon E’ centers (≡Si⋅). We identify these defect pairs with the self-trapped triplet exciton and the 0.25 ps decay with the motion of the photoexcited oxygen atom. Similar results were obtained with both crystalline and amorphous silica samples.
Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron
Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron
Electrical & Computer Engineering Faculty Publications
The transport of femtosecond-laser-excited nonequilibrium electrons across polycrystalline and single-crystalline gold films has been investigated through time-of-flight measurements. The thicknesses of the films range from 25 to 400 nm. Ballistic electrons as well as electrons interacting with other electrons and/or with the lattice have been observed. The ballistic component dominates the transport in the thinner films, whereas the interactive transport mechanism is dominant at the upper end of the thickness range. A slower effective velocity of the interactive component is observed in the polycrystalline samples, and is assumed to arise from the presence of grain boundaries. The reflection coefficient of …
Hysteresis And Anchoring Energy In Ferroelectric Liquid Crystals, Yuri Panarin
Hysteresis And Anchoring Energy In Ferroelectric Liquid Crystals, Yuri Panarin
Articles
The frequency dispersion of the coercive force of Ferroelectric Liquid Crystals (FLC) cells has been detected and examined in the range of infralow (lower than 0.1 Hz) frequencies. To clarify the low-frequency dispersion, the model has been suggested, based on the arrangement of free charges and well describing the experimental curves. The method for determination of the energy of FLC anchoring at the surface, developed on the basis of the static hysteresis loop, has been proposed. The dependence of bistability and the anchoring energy upon the orientant layer thickness has experimentally been investigated.