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Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred
Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred
Faculty Publications
We have studied at cryogenic temperatures photoluminescence features which lie more than 0.15 eV below the band edge in ZnxCd1-xTe (0≤x≤0.09) crystals. The same features, namely a defect band which lies at about 0.13-0.20 eV below the band-gap energy and a peak at 1.1 eV, that are observed in pure CdTe samples are observed in these alloy materials. In annealed samples we observe that the 1.1 eV feature, which has been attributed to tellurium vacancies, increases with fast cooling. Increased concentrations of tellurium vacancies can be understood in terms of the phase diagram of CdTe which indicates that higher concentrations …