Physics Commons^™

Anomalous Stranski-Krastanov Growth Of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness, Christopher F. Schuck, Simon K. Roy, Trent Garrett, Paul J. Simmonds

Materials Science and Engineering Faculty Publications and Presentations

Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In_0.52Al_0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we …

Synergistic Interactions Of H2 And N2 With Molten Gallium In The Presence Of Plasma, Maria L. Carreon, Daniel F. Jaramillo-Cabanzo, Indira Chaudhuri, Madhu Menon, Mahendra K. Sunkara

Physics and Astronomy Faculty Publications

The present study examines the interaction of hydrogen and nitrogen plasmas with gallium in an effort to gain insights into the mechanisms behind the synergetic effect of plasma and a catalytic metal. Absorption/desorption experiments were performed, accompanied by theoretical-computational calculations. Experiments were carried out in a plasma-enhanced, Ga-packed, batch reactor and entailed monitoring the change in pressure at different temperatures. The results indicated a rapid adsorption/dissolution of the gas into the molten metal when gallium was exposed to plasma, even at a low temperature of 100 °C. The experimental observations, when hydrogen was used, indicate that gallium acts as a …

Quantum Dot Band Gap Investigations, John Ryan Peterson

Student Works

Improving solar panel efficiency has become increasingly important as the world searches for cheap renewable energy. Recent developments in the industry have focused on multi-layer cells, some of which use semiconducting dyes to absorb light in place of crystalline solids. In this paper, I characterize various dyes recently synthesized for use in solar panels. These dyes contain semiconducting nanoparticles enclosed primarily by the protein ferritin to limit particle size. The band gaps were measured using either optical absorption spectroscopy or measuring the photoluminescence spectrum, depending on the type of semiconductor. The results indicate that both manganese oxide and lead sulfide …

Titanium Trisulfide Monolayer: Theoretical Prediction Of A New Direct-Gap Semiconductor With High And Anisotropic Carrier Mobility, Jun Dai, Xiao Cheng Zeng

Xiao Cheng Zeng Publications

A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS₃) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS₃ monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS₃ is highly anisotropic, amounting to about 10,000 cm² V⁻¹ s⁻¹ in the b direction, which is higher than that of the MoS₂ monolayer, whereas the hole mobility is about two orders of magnitude lower. …

Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev

Department of Physics and Astronomy: Faculty Publications

We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the topological and non-topological regions respectively. The hybridization of bound edge states results in spin currents and 4π-periodic torques, as a function of the relative magnetic field angle – an effect which is dual to the fractional Josephson effect. We establish relation between torques and spin-currents in the non-topological region where the magnetic field is almost zero and spin is …

Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound

Browse All Undergraduate research

No abstract provided.

Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg

Matthias Fuchs Publications

Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven lightmatter interactions anticipated at accelerator-based sources.

Cytotoxicity Of Zno Nanoparticles Can Be Tailored By Modifying Their Surface Structure: A Green Chemistry Approach For Safer Nanomaterials, Alex Punnoose, Kelsey Dodge, John W. Rasmussen, Jordan Chess, Denise Wingett, Catherine Anders

Physics Faculty Publications and Presentations

ZnO nanoparticles (NP) are extensively used in numerous nanotechnology applications; however, they also happen to be one of the most toxic nanomaterials. This raises significant environmental and health concerns and calls for the need to develop new synthetic approaches to produce safer ZnO NP, while preserving their attractive optical, electronic, and structural properties. In this work, we demonstrate that the cytotoxicity of ZnO NP can be tailored by modifying their surface-bound chemical groups, while maintaining the core ZnO structure and related properties. Two equally sized (9.26 ± 0.11 nm) ZnO NP samples were synthesized from the same zinc acetate precursor …

Temperature Dependence Of Defect-Related Photoluminescence In Iii-V And Ii-Vi Semiconductors, Michael A. Reshchikov

Physics Publications

Mechanisms of thermal quenching of photoluminescence (PL) related to defects insemiconductors are analyzed. We conclude that the Schön-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III–V and II–VI semiconductorsas compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PLare simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching ofPL is considered in more detail. This phenomenon is predicted …

Time-Resolved Photoluminescence From Defects In N-Type Gan, Michael A. Reshchikov

Physics Publications

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.

Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis

Faculty Publications

Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge_1-ySn_y films grown on Si substrates. For the p-Ge, strong direct bandgap (E_D) along with weak indirect bandgap related (E_ID) PL at low temperatures (LTs) and strong E_D PL at room temperature (RT) were observed. In contrast, for the n-Ge_1-ySn_y, very strong dominant E_ID PL at LT and strong E_D PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge_1-ySn …

Electronic Properties Of Metal-Arene Functionalized Graphene, Pavel Plachinda, David Evans, Raj Solanki

Physics Faculty Publications and Presentations

We have employed first-principles density-functional calculations to study the electronic characteristics of covalently functionalized graphene by metal-bis-arene chemistry. It is shown that functionalization with M-bis-arene (M = Ti, V, Cr, Mn, Fe) molecules leads to an opening in the bandgap of graphene (up to 0.81 eV for the Cr derivative), and as a result, transforms it from a semimetal to a semiconductor. The bandgap induced by attachment of a metal atom topped by a benzene ring is attributed to modification of π-conjugation and depends on the concentration of functionalizing molecules. This approach offers a means of tailoring the band structure …

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge_1−ySn_y alloys on Si are extended to Sn concentrations in the 10¹⁹−10²⁰ cm⁻³ range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …

Proceedings Of The Introduction To Neutrosophic Physics: Unmatter & Unparticle - International Conference, Florentin Smarandache

Branch Mathematics and Statistics Faculty and Staff Publications

Neutrosophic Physics.

Let A be a physical entity (i.e. concept, notion, object, space, field, idea, law, property, state, attribute, theorem, theory, etc.), antiA be the opposite of A, and neutA be their neutral (i.e. neither A nor antiA, but in between).

Neutrosophic Physics is a mixture of two or three of these entities A, antiA, and neutA that hold together.

Therefore, we can have neutrosophic fields, and neutrosophic objects, neutrosophic states, etc.

Paradoxist Physics.

Neutrosophic Physics is an extension of Paradoxist Physics, since Paradoxist Physics is a combination of physical contradictories A and antiA only that hold together, without …

Transition From N-Type To P-Type Destroys Ferromagnetism In Semiconducting Sn1-XCoXO2 And Sn1-XCrXO2 Nanoparticles, C. Van Komen, A. Punnoose, M. S. Seehra

Physics Faculty Publications and Presentations

This work reports strong correlations between the structural, magnetic and electronic properties of room temperature ferromagnets (RTFM) Sn_1-xCo_xO₂ and Sn_1-xCr_xO₂ for x = 0 to 0.1. The samples prepared by the sol-gel chemical method show RTFM for x < x_L with the limiting concentration x_L = 0.01 for Co doping and x_L = 0.025 for Cr doping. As doping level x is increased from x = 0, the magnetic moment per ion, μ, increases and the lattice volume V_L decreases up to _x = x_L. …

How Much Can Guided Modes Enhance Absorption In Thin Solar Cells?, Peter N. Saeta, Vivian E. Ferry, Domenico Pacifici, Jeremy N. Munday, Harry A. Atwater

All HMC Faculty Publications and Research

Absorption enhancement in thin metal-backed solar cells caused by dipole scatterers embedded in the absorbing layer is studied using a semi-analytical approach. The method accounts for changes in the radiation rate produced by layers above and below the dipole, and treats incoherently the subsequent scattering of light in guided modes from other dipoles. We find large absorption enhancements for strongly coupled dipoles, exceeding the ergodic limit in some configurations involving lossless dipoles. An antireflection-coated 100-nm layer of a-Si:H on Ag absorbs up to 87% of incident above-gap light. Thin layers of both strong and weak absorbers show similar strongly enhanced …

Carrier Capture Dynamics Of Inas/Gaas Quantum Dots, T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, A. V. Uskov

Physical Sciences Publications

Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe spectroscopy. Measurements of the recovery times versus injection current reveal a power law behavior predicted by a quantum dot rate equation model. These results indicate that Auger processes dominate the carrier dynamics.

Selective Growth Of Single-Crystalline Zno Nanowires On Doped Silicon, Rolf Könenkamp, Robert Campbell Word, M. Dosmailov, J. Meiss, Athavan Nadarajah

Physics Faculty Publications and Presentations

We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.

Vertical Nanowire Transistors With Low Leakage Current, Jie Chen, M. C. Lux-Steiner, Rolf Kӧnenkamp, S. Klaumünzer

Physics Faculty Publications and Presentations

A vertical field-effect transistor based on semiconductor nanowires is reported. The fabrication of the device uses a self-supporting flexible nanostructured polymer foil as a template and an electrochemical growth technique for the preparation of the semiconductor. The fabrication process is substantially simpler, and the mechanical robustness is strongly increased as compared to the original device. The channel region of the transistor has a diameter of ∼100 nm and a length of ∼50 nm. Operation in the hole depletion mode allows a change of the transfer conductance by ∼50% when the gate voltages is changed in the range ∓1 V. The …

Monte Carlo Analysis Of Gan-Based Gunn Oscillators For Microwave Power Generation, R. P. Joshi, V. Sridhara, P. Shah, R. D. Del Rosario

Electrical & Computer Engineering Faculty Publications

Monte Carlo studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: (i) devices with the conventional single notch structure, and (ii) repetitive structures with serial segments to fashion a "multiple domain" device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficiency are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes …

Analysis Of Scanning Tunneling Optical Spectroscopy Applied To Narrow Gap Semiconductors, James D. Patterson, James G. Mantovani

Aerospace, Physics, and Space Science Faculty Publications

Homogeneous II-VI narrow gap semiconducting alloys are of interest because of their use in infrared detectors. These compound semiconductor materials are inherently difficult to grow in bulk due to gravity induced convective flows. A microgravity growth environment has therefore been considered. In order to evaluate the quality of crystals grown in space compared to those grown on the ground, it is necessary to characterize both. One important aspect of this characterization is the study of stoichiometry, x. A characterization scheme using scanning tunneling optical spectroscopy (STOS) involves determining the spectral response of the photoexcited tunneling current for a semiconductor. By …

Optical Imaging Of Carrier Dynamics In Silicon With Subwavelength Resolution, Andres H. La Rosa, B. I. Yakobson, H. D. Hallen

Physics Faculty Publications and Presentations

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce

Bioelectrics Publications

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena

Faculty Publications

The discovery and understanding of the photoelectric effect led to the study of photoemissive materials fall into two major categories: classical photoemitters and negative-electron-affinity (NEA) materials. Classical photoemitters usually involve an alkali metal, a group-V element such as phosphorus, silver, and/or oxygen. An example is the Ag-O-Cs (S1) photoemitter. NEA photocathodes consist of a photoconductive single crystal semiconductor covered with a thin layer of cesium and oxygen. This layer lowers the work function of the photocathode. A dipole layer is formed at the surface, and band bending occurs. This lowers the effective work function. An example is the GaAs(CsO) photocathode …

Ionization‐Enhanced Diffusion: Ion Implantation In Semiconductors, J Bourgoin, David Peak, J W. Corbett

All Physics Faculty Publications

A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.