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Semiconductor growth

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Chemistry-Induced Intrinsic Stress Variations During The Chemical Vapor Deposition Of Polycrystalline Diamond, Ashok Rajamani, Brian W. Sheldon, Sumit Nijhawan, Alan Schwartzman, Janet Rankin, Barbara L. Walden, Laura Riester Jan 2004

Chemistry-Induced Intrinsic Stress Variations During The Chemical Vapor Deposition Of Polycrystalline Diamond, Ashok Rajamani, Brian W. Sheldon, Sumit Nijhawan, Alan Schwartzman, Janet Rankin, Barbara L. Walden, Laura Riester

Faculty Scholarship

Intrinsic tensile stresses in polycrystalline films are often attributed to the coalescence of neighboring grains during the early stages of film growth, where the energy decrease associated with converting two free surfaces into a grain boundary provides the driving force for creating tensile stress. Several recent models have analyzed this energy trade off to establish relationships between the stress and the surface∕interfacial energy driving force, the elastic properties of the film, and the grain size. To investigate these predictions, experiments were conducted with diamond films produced by chemical vapor deposition. A multistep processing procedure was used to produce films with …