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Full-Text Articles in Physics
Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman
Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman
Alexei Gruverman Publications
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is …
Electronic Structures Of Lanthanum, Samarium, And Gadolinium Sulfides, Lu Wang, Chris M. Marin, Wai-Ning Mei, Chin Li Cheung
Electronic Structures Of Lanthanum, Samarium, And Gadolinium Sulfides, Lu Wang, Chris M. Marin, Wai-Ning Mei, Chin Li Cheung
Physics Faculty Publications
In this study, we report our efforts to elucidate the electronic structures of two lattice structures of lanthanide sulfides (LnS and Ln3S4) and for three lanthanides (Ln = La, Sm and Gd) using density functional theory calculations performed with the CASTEP code. A DFT+U method was used for the corrections of on-site Coulomb interactions with U = 6 eV. The calculated electronic structures show that both lanthanum and gadolinium sulfides have metallic properties, consistent with the available experimental results. However, the calculated electronic structure of Sm3S4 is considerably different from those of the La3S4 and Gd3S4 and is predicted to …
Strain Induced Half-Metal To Semiconductor Transition In Gdn, Chun-Gang Duan, Renat F. Sabirianov, Jianjun Liu, Wai-Ning Mei, Peter A. Dowben, John R. Hardy
Strain Induced Half-Metal To Semiconductor Transition In Gdn, Chun-Gang Duan, Renat F. Sabirianov, Jianjun Liu, Wai-Ning Mei, Peter A. Dowben, John R. Hardy
Physics Faculty Publications
We investigate the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in the conduction properties associated with the volume increase: first from half-metallic to semimetallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or …