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Full-Text Articles in Physics
Carrier Capture Dynamics Of Single Ingaas/Gaas Quantum-Dot Layers, Kripa N. Chauhaun, D. Mark Riffe, Addison E. Everett, D. J. Kim, H Yang, F. K. Shen
Carrier Capture Dynamics Of Single Ingaas/Gaas Quantum-Dot Layers, Kripa N. Chauhaun, D. Mark Riffe, Addison E. Everett, D. J. Kim, H Yang, F. K. Shen
All Physics Faculty Publications
Using 800nm, 25-fs pulses from a mode locked Ti:Al2O3 laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In0.4Ga0.6As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the …
Ferroelectricity In Non-Stoichiometric Srtio3 Films Studied By Ultraviolet Raman Spectroscopy, Dmitri A. Tenne, A. K. Farrar
Ferroelectricity In Non-Stoichiometric Srtio3 Films Studied By Ultraviolet Raman Spectroscopy, Dmitri A. Tenne, A. K. Farrar
Physics Faculty Publications and Presentations
Homoepitaxial Sr1+xTiO3+δ films with -0.2 ≤ x ≤ 0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Non-stoichiometry for strontium- deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution …
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Physics Faculty Publications
We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to …
Hopping Conduction In Molecular Beam Epitaxial Gaas Grown At Very Low Temperatures, David C. Look, Z-Q. Fang, J. W. Look, J. R. Sizelove
Hopping Conduction In Molecular Beam Epitaxial Gaas Grown At Very Low Temperatures, David C. Look, Z-Q. Fang, J. W. Look, J. R. Sizelove
Physics Faculty Publications
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial layers grown at very low substrate temperatures, 200 to 400°C. For growth temperatures below 300°C, the conduction is dominated by hopping between arsenic antisite defects of concentrations up to 1020 cm−3. Below measurement temperatures of about 130 K, the hopping conduction can be quenched by strong IR light illumination, because the antisite then becomes metastable. The antisite has a thermal activation energy of , and thus is not identical to the famous EL2. Both nearest‐neighbor and variable‐range hopping mechanisms are considered in …