Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
Articles 1 - 5 of 5
Full-Text Articles in Physics
Quark Pseudodistributions At Short Distances, A. V. Radyushkin
Quark Pseudodistributions At Short Distances, A. V. Radyushkin
Physics Faculty Publications
We perform a one-loop study of the small-z2 3 behavior of the Ioffe-time distribution (ITD) M(ν, z2 3), the basic function that may be converted into parton pseudo- and quasi-distributions. We calculate the corrections on the operator level, so that our results may be also used for pseudo-distribution amplitudes and generalized parton pseudodistributions. We separate two sources of the z2 3-dependence at small z2 the reduced ITD given by the ratio M(ν, z2 due to ln z2 3)/M(0, z2 3. One is related to the ultraviolet (UV) singularities generated by the gauge link. Our …
Effect Of Disorder On The Magnetic And Electronic Structure Of A Prospective Spin-Gapless Semiconductor Mncrval, P. Kharel, J. Herran, Pavel Lukashev, Y. Jin, J. Waybright, S. Gilbert, B, Staten, P. Gray, S. Valloppilly, Y. Huh, D. J. Sellmyer
Effect Of Disorder On The Magnetic And Electronic Structure Of A Prospective Spin-Gapless Semiconductor Mncrval, P. Kharel, J. Herran, Pavel Lukashev, Y. Jin, J. Waybright, S. Gilbert, B, Staten, P. Gray, S. Valloppilly, Y. Huh, D. J. Sellmyer
Faculty Publications
Recent discovery of a new class of materials, spin-gapless semiconductors (SGS), has attracted considerable attention in the last few years, primarily due to potential applications in the emerging field of spin-based electronics (spintronics). Here, we investigate structural, electronic, and magnetic properties of one potential SGS compound, MnCrVAl, using various experimental and theoretical techniques. Our calculations show that this material exhibits ≈ 0.5 eV band gap for the majority-spin states, while for the minority-spin it is nearly gapless. The calculated magnetic moment for the completely ordered structure is 2.9 µB/f.u., which is different from our experimentally measured value of …
Tuning Electronic Structure Via Exipatial Strain In Sr2Iro4 Thin Films, J. Nichols, Jsaminka Terzic, Emily Geraldine Bittle, Oleksandr B. Korneta, Lance E. De Long, Joseph Brill, Gang Cao, Sung S. Ambrose Seo
Tuning Electronic Structure Via Exipatial Strain In Sr2Iro4 Thin Films, J. Nichols, Jsaminka Terzic, Emily Geraldine Bittle, Oleksandr B. Korneta, Lance E. De Long, Joseph Brill, Gang Cao, Sung S. Ambrose Seo
Physics and Astronomy Faculty Publications
We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structure as a function of lattice-strain. Under tensile (compressive) strain, increased (decreased) Ir-O-Ir bond-angle is expected to result in increased (decreased) electronic bandwidth. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strain, indicating that the electronic-correlation energy is also affected by in-plane lattice-strain. The effective tuning of electronic structure under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic …
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Electrical & Computer Engineering Faculty Publications
γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Physics Faculty Publications
High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3 . © …