Open Access. Powered by Scholars. Published by Universities.®

Physics Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 3 of 3

Full-Text Articles in Physics

Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski Jan 2016

Rapid And Accurate C-V Measurements, Ji-Hong Kim, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, David Nminibapiel, Joseph J. Kopanski

Electrical & Computer Engineering Faculty Publications

We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown …


Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li Jan 2014

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …


Measurement Of Conductivity And Charge Storage In Insulators Related To Spacecraft Charging, A. R. Frederickson, John R. Dennison Dec 2003

Measurement Of Conductivity And Charge Storage In Insulators Related To Spacecraft Charging, A. R. Frederickson, John R. Dennison

All Physics Faculty Publications

Improved experimental methods are discussed for laboratory measurement of conductivity and electric field in insulating spacecraft material intended for space radiation and plasma environments. These measurement techniques investigate the following features: 1) measurements of conductivity are up to four orders of magnitude smaller than those determined by existing standard methods. 2) Conductivity is altered as radiation accumulates and trapping states fill with electrons. 3) With intense kiloelectronvolt electron irradiation, electrons are continually emitted for hours from the irradiated surface after the irradiation ceases. 4) Charging induced by electron irradiation is strongly modified by the electron-hole pairs that the irradiation generates …