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Low Temperature Ordering And High (001) Orientation Of [Fe/Pt/Cu]18 Multilayer Films, Yongsheng Yu, Xingzhong Li, T A. George, W D. Fei, Haibo Li, David J. Sellmyer
Low Temperature Ordering And High (001) Orientation Of [Fe/Pt/Cu]18 Multilayer Films, Yongsheng Yu, Xingzhong Li, T A. George, W D. Fei, Haibo Li, David J. Sellmyer
David Sellmyer Publications
[Fe/Pt/Cu]18 multilayer films with different Cu thicknesses were prepared on thermally oxidized Si (111) substrates at room temperature using dc- and rf-magnetron sputtering. The magnetic proper-ties and microstructure of [Fe/Pt/Cu]18 multilayer films annealed at various temperatures have been investigated. Compared with pure [Fe/Pt]18 multilayer films low-temperature ordering and (001) ori-entation in the annealed films with Cu volume concentration below 20% can be obtained. During annealing process Cu atoms diffused into FePt lattice which enhanced the diffusion of Fe and Pt atoms and the grain growth of the films. The perpendicular anisotropy and hard magnetic properties of the …
Carrier Capture Dynamics Of Single Ingaas/Gaas Quantum-Dot Layers, Kripa N. Chauhaun, D. Mark Riffe, Addison E. Everett, D. J. Kim, H Yang, F. K. Shen
Carrier Capture Dynamics Of Single Ingaas/Gaas Quantum-Dot Layers, Kripa N. Chauhaun, D. Mark Riffe, Addison E. Everett, D. J. Kim, H Yang, F. K. Shen
All Physics Faculty Publications
Using 800nm, 25-fs pulses from a mode locked Ti:Al2O3 laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In0.4Ga0.6As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the …