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Full-Text Articles in Physics
). Size Dependency Of The Elastic Modulus Of Zno Nanowires: Surface Stress Effect, Guofeng Wang, Xiaodong Li
). Size Dependency Of The Elastic Modulus Of Zno Nanowires: Surface Stress Effect, Guofeng Wang, Xiaodong Li
Faculty Publications
Relation between the elastic modulus and the diameter (D) of ZnOnanowires was elucidated using a model with the calculated ZnOsurface stresses as input. We predict for ZnOnanowires due to surface stress effect: (1) when D>20nm, the elastic modulus would be lower than the bulk modulus and decrease with the decreasing diameter, (2) when 20nm>D>2nm, the nanowires with a longer length and a wurtzite crystal structure could be mechanically unstable, and (3) when D<2nm, the elastic modulus would be higher than that of the bulk value and increase with a decrease in nanowire diameter.
Electron And Hole Traps In N-Doped Zno Grown On P-Type Si Substrate By Mocvd, Zhaoqiang Fang, Bruce B. Claflin, David C. Look, Lei L. Kerr, Xiaonan Li
Electron And Hole Traps In N-Doped Zno Grown On P-Type Si Substrate By Mocvd, Zhaoqiang Fang, Bruce B. Claflin, David C. Look, Lei L. Kerr, Xiaonan Li
Physics Faculty Publications
Electron and hole traps in N-doped ZnO were investigated using a structure of n+-ZnO:Al/i-ZnO/ZnO:N grown on a p-Si substrate by metalorganic chemical vapor deposition (for growth of the ZnO:N layer) and sputtering deposition (for growth of the i-ZnO and n+-ZnO:Al layers). Current-voltage and capacitance-voltage characteristics measured at temperatures from 200 to 400 K show that the structure is an abrupt n+−p diode with very low leakage currents. By using deep level transient spectroscopy, two hole traps, H3 (0.35 eV) and H4 (0.48 eV), are found in the p-Si …