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Nanolithography With Metastable Neon Atoms: Enhanced Rate Of Contamination Resist Formation For Nanostructure Fabrication, Steven J. Rehse, A.D. Glueck, S.A. Lee, A.B. Goulakov
Nanolithography With Metastable Neon Atoms: Enhanced Rate Of Contamination Resist Formation For Nanostructure Fabrication, Steven J. Rehse, A.D. Glueck, S.A. Lee, A.B. Goulakov
Physics Publications
We report a sevenfold improvement in the rate of contamination resist formation over previous experiments by using metastable neon atoms for nanolithography. Chemically assisted ion beam etching was used to transfer the resist pattern into the substrate. We demonstrate the fabrication of 50-nm-wide features in GaAs with well-defined edges and an aspect ratio >2:1. These are the best resolution and highest aspect ratio features that have been achieved with metastable atom lithography. The resist formation rate by the metastable neon atoms and the etch selectivity of the contamination resist with GaAs were measured.
Computational Methods For Three-Electron Atomic Systems In Hylleraas Coordinates, Z. C. Yan, Gordon W. F. Drake
Computational Methods For Three-Electron Atomic Systems In Hylleraas Coordinates, Z. C. Yan, Gordon W. F. Drake
Physics Publications
General methods for evaluating three-electron integrals in Hylleraas coordinates are given. Formulae are obtained for the matrix elements of various operators arising in Hylleraas-type variational calculations for states of arbitrary angular momentum. For the calculations of Breit interaction, a number of reduction relations are developed for the elimination of singularities in some singular integrals. A numerically stable scheme is presented for the case when one of the powers of r ij is -2.