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Identification Of Point Defects In Hvpe-Grown Gan By Steady-State And Time-Resolved Photoluminescence, Michael A. Reshchikov, Denis O. Demchenko, A Usikov, H Helava, Yu. Makarov
Identification Of Point Defects In Hvpe-Grown Gan By Steady-State And Time-Resolved Photoluminescence, Michael A. Reshchikov, Denis O. Demchenko, A Usikov, H Helava, Yu. Makarov
Forensic Science Publications
We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved photoluminescence (PL). Among the most common PL bands in this material are the red luminescence band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV (attributed to an unknown acceptor having an energy level 1.130 eV above the valence band), the blue luminescence band with a maximum at 2.9 eV (attributed to ZnGa), and the ultraviolet luminescence band with the main peak at 3.27 eV (related to an unknown shallow acceptor). In GaN with the highest quality, the dominant defect-related …
Defect-Related Luminescence In Undoped Gan Grown By Hvpe, Michael A. Reshchikov, A Usikov, H Helava, Yu. Makarov
Defect-Related Luminescence In Undoped Gan Grown By Hvpe, Michael A. Reshchikov, A Usikov, H Helava, Yu. Makarov
Forensic Science Publications
Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This …