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Full-Text Articles in Physics
Development Of A Prototype Superconducting Radio-Frequency Cavity For Conduction Cooled Accelerators, Gianluigi Ciovati, J. Anderson, S. Balachandran, G. Cheng, B. Coritron, E. Daly, P. Dhakal, Alex Gurevich, F. Hannon, K. Harding, L. Holland, F. Marhauser, K. Mclaughlin, D. Packard, T. Powers, U. Pudasaini, J. Rathke, R. Rimmer, T. Schultheiss, H. Vennekate, D. Vollmer
Development Of A Prototype Superconducting Radio-Frequency Cavity For Conduction Cooled Accelerators, Gianluigi Ciovati, J. Anderson, S. Balachandran, G. Cheng, B. Coritron, E. Daly, P. Dhakal, Alex Gurevich, F. Hannon, K. Harding, L. Holland, F. Marhauser, K. Mclaughlin, D. Packard, T. Powers, U. Pudasaini, J. Rathke, R. Rimmer, T. Schultheiss, H. Vennekate, D. Vollmer
Physics Faculty Publications
The higher efficiency of superconducting radio-frequency (SRF) cavities compared to normal -conducting ones enables the development of high-energy continuous-wave linear accelerators (linacs). Recent progress in the development of high-quality Nb3Sn film coatings along with the availability of cryocoolers with high cooling capacity at 4 K makes it feasible to operate SRF cavities cooled by thermal conduction at relevant accelerating gradients for use in accelerators. A possible use of conduction-cooled SRF linacs is for environmental applications, requiring electron beams with energy of 1-10 MeV and 1 MW of power. We have designed a 915 MHz SRF linac for such …
A Multi-Layered Srf Cavity For Conduction Cooling Applications, Gianluigi Ciovati, G. Cheng, E. Daly, G. V. Eremeev, J. Henry, R. A. Rimmer, Ishwari Prasad Parajuli, U. Pudasaini
A Multi-Layered Srf Cavity For Conduction Cooling Applications, Gianluigi Ciovati, G. Cheng, E. Daly, G. V. Eremeev, J. Henry, R. A. Rimmer, Ishwari Prasad Parajuli, U. Pudasaini
Physics Faculty Publications
Industrial application of SRF technology would favor the use of cryocoolers to conductively cool SRF cavities for particle accelerators, operating at or above 4.3 K. In order to achieve a lower surface resistance than Nb at 4.3 K, a superconductor with higher critical temperature should be used, whereas a metal with higher thermal conductivity than Nb should be used to conduct the heat to the cryocoolers. A standard 1.5 GHz bulk Nb single-cell cavity has been coated with a ~2 µm thick layer of Nb₃Sn on the inner surface and with a 5 mm thick Cu layer on the outer …
Properties Of Cu(In,Ga,Al)Se² Thin Films Fabricated By Magnetron Sputtering, Talaat A. Hameed, Wei Cao, Bahiga A. Mansour, Inas K. Elzawaway, El-Metwally M. Abdelrazek, Hani E. Elsayed-Ali
Properties Of Cu(In,Ga,Al)Se² Thin Films Fabricated By Magnetron Sputtering, Talaat A. Hameed, Wei Cao, Bahiga A. Mansour, Inas K. Elzawaway, El-Metwally M. Abdelrazek, Hani E. Elsayed-Ali
Applied Research Center Publications
Cu (In,Ga,Al)Se2 (CIGAS) thin films were studied as an alternative absorber layer material to Cu(InxGa1-x)Se2. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ …
Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac
Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Walker, J.D., Khatri, H., Ranjan, V., Li, J., Collins, R.W., & Marsillac, S. (2009). Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. Applied Physics Letters, 94(14). doi: 10.1063/1.3117222
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.
An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko
An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko
Electrical & Computer Engineering Faculty Publications
A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.