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Effect Of Disorder On The Magnetic And Electronic Structure Of A Prospective Spin-Gapless Semiconductor Mncrval, P. Kharel, J. Herran, Pavel Lukashev, Y. Jin, J. Waybright, S. Gilbert, B, Staten, P. Gray, S. Valloppilly, Y. Huh, D. J. Sellmyer
Effect Of Disorder On The Magnetic And Electronic Structure Of A Prospective Spin-Gapless Semiconductor Mncrval, P. Kharel, J. Herran, Pavel Lukashev, Y. Jin, J. Waybright, S. Gilbert, B, Staten, P. Gray, S. Valloppilly, Y. Huh, D. J. Sellmyer
Faculty Publications
Recent discovery of a new class of materials, spin-gapless semiconductors (SGS), has attracted considerable attention in the last few years, primarily due to potential applications in the emerging field of spin-based electronics (spintronics). Here, we investigate structural, electronic, and magnetic properties of one potential SGS compound, MnCrVAl, using various experimental and theoretical techniques. Our calculations show that this material exhibits ≈ 0.5 eV band gap for the majority-spin states, while for the minority-spin it is nearly gapless. The calculated magnetic moment for the completely ordered structure is 2.9 µB/f.u., which is different from our experimentally measured value of …