Open Access. Powered by Scholars. Published by Universities.®
- Discipline
Articles 1 - 2 of 2
Full-Text Articles in Physics
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Electron Traps In Ag-Doped Li2B4O7 Crystals: The Role Of Ag Interstitial Ions, Timothy D. Gustafson, Brant E. Kananen, Nancy C. Giles, Brian C. Holloway, Volodymyr T. Adamiv, Ihor M. Teslyuk, Yaroslav V. Burak, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to establish models for electron traps in Ag-doped lithium tetraborate (Li2B4O7) crystals. When exposed at room temperature to ionizing radiation, electrons are trapped at interstitial Ag+ ions and holes are trapped at Ag+ ions on Li+ sites. The trapped electrons occupy a 5s1 orbital on the interstitial Ag ions (some of the unpaired spin density is also on neighboring ions). Three EPR spectra are assigned to electrons trapped at interstitial Ag ions. Their g values are near 1.99 and they have resolved hyperfine structure …
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySn …