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Full-Text Articles in Physics
Superconducting Phase Transition In Inhomogeneous Chains Of Superconducting Islands, Eduard Ilin, Irina Burkova, Xiangyu Song, Michael Pak, Dmitri S. Golubev, Alexey Bezryadin
Superconducting Phase Transition In Inhomogeneous Chains Of Superconducting Islands, Eduard Ilin, Irina Burkova, Xiangyu Song, Michael Pak, Dmitri S. Golubev, Alexey Bezryadin
Faculty Publications
We study one-dimensional chains of superconducting islands with a particular emphasis on the regime in which every second island is switched into its normal state, thus forming a superconductor-insulator-normal metal (S-I-N) repetition pattern. As is known since Giaever tunneling experiments, tunneling charge transport between a superconductor and a normal metal becomes exponentially suppressed, and zero-bias resistance diverges, as the temperature is reduced and the energy gap of the superconductor grows larger than the thermal energy. Here we demonstrate that this physical phenomenon strongly impacts transport properties of inhomogeneous superconductors made of weakly coupled islands with fluctuating values of the critical …
Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf
Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf
Faculty Publications
Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the …
Oxygen Vacancies In Lialo2 Crystals, Maurio S. Holston, I. P. Ferguson, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Oxygen Vacancies In Lialo2 Crystals, Maurio S. Holston, I. P. Ferguson, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
Singly ionized oxygen vacancies are produced in LiAlO2 crystals by direct displacement events during a neutron irradiation. These vacancies, with one trapped electron, are referred to as V+O centers. They are identified and characterized using electron paramagnetic resonance (EPR) and optical absorption. The EPR spectrum from the V+O centers is best monitored near 100 K with low microwave power. When the magnetic field is along the [001] direction, this spectrum has a g value of 2.0030 and well-resolved hyperfine interactions of 310 and 240 MHz with the two 27Al nuclei that are adjacent to the oxygen vacancy. A second …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …