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Wannier-Stark Localization In Modulation-Doped Multiple-Quantum-Well Structures, Roger H. Yu
Wannier-Stark Localization In Modulation-Doped Multiple-Quantum-Well Structures, Roger H. Yu
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The external-electric-field effect and the doping effect on a modulation-doped finite-length GaAs/AlxGa1−xAs superlattice have been studied by solving the Schrödinger-Kohn-Sham equation and the Poisson equation self-consistently. In the heavy-doping case, the external electric field makes electrons sequentially tunnel through several potential barriers, and accumulates electrons near one side of the finite-length superlattice. The collective motion of the electrons results in high- and low-field domains in the superlattice. We have found that Wannier-Stark localization exists only in the high-field domain, and that the electronic states are not evenly spaced. The electric-field-induced (doping induced) depopulation (population) of subbands …