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Full-Text Articles in Physics
Calculating The Energy Barriers Required To Join Metal-Organic Framework Synthesis Intermediates With Non-Equilibrium Molecular Simulation, Marcus A. Tubbs, David Cantu, Roger Rousseau, Vassiliki-Alexandra Glezakou
Calculating The Energy Barriers Required To Join Metal-Organic Framework Synthesis Intermediates With Non-Equilibrium Molecular Simulation, Marcus A. Tubbs, David Cantu, Roger Rousseau, Vassiliki-Alexandra Glezakou
STAR Program Research Presentations
Metal organic frameworks (MOFs) are synthetic materials made of a cage-like lattice of metal nodes connected by organic linkers. The pores between the nodes define the characteristics of the material. A MOF, MIL-101, has shown great capacity in the adsorption of carbon dioxide and methane, as well as in hydrogenation catalysis with palladium. While there has been success in synthesizing MIL-101 and other MOFs, the mechanistic details behind their assembly remain unknown. Understanding the synthesis mechanism is necessary to understand the kinetics involved and be able to produce this useful material on an industrial scale. Using MIL-101 as a prototypical …
Titanium Trisulfide Monolayer: Theoretical Prediction Of A New Direct-Gap Semiconductor With High And Anisotropic Carrier Mobility, Jun Dai, Xiao Cheng Zeng
Titanium Trisulfide Monolayer: Theoretical Prediction Of A New Direct-Gap Semiconductor With High And Anisotropic Carrier Mobility, Jun Dai, Xiao Cheng Zeng
Xiao Cheng Zeng Publications
A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS3) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS3 monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS3 is highly anisotropic, amounting to about 10,000 cm2 V−1 s−1 in the b direction, which is higher than that of the MoS2 monolayer, whereas the hole mobility is about two orders of magnitude lower. …
Temperature Dependent C-Axis Hole Mobilities In Rubrene Single Crystals Determined By Time-Of-Flight, Russell L. Lidberg, Tom J. Pundsack, Neale O. Haugen, Lucas R. Johnstone, C. Daniel Frisbie
Temperature Dependent C-Axis Hole Mobilities In Rubrene Single Crystals Determined By Time-Of-Flight, Russell L. Lidberg, Tom J. Pundsack, Neale O. Haugen, Lucas R. Johnstone, C. Daniel Frisbie
Physics and Astronomy Faculty Publications
Hole mobilities (μ) in rubrene single crystals (space group Cmca) along the crystallographic c-axis have been investigated as a function of temperature and applied electric field by the time-of-fight method. Measurements demonstrate an inverse power law dependence on temperature, namely,μ=μ0T−n with n = 1.8, from room temperature down to 180 K. At 296 K, the average value of μ was found to be 0.29 cm2/Vs increasing to an average value of 0.70 cm2/Vs at 180 K. Below 180 K a decrease in mobility is observed with further cooling. Overall, these results confirm the …
Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan
Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan
Faculty Publications
This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G) and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse …