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Atomic Layer Growth Of Inse And Sb₂Se₃ Layered Semiconductors And Their Heterostructure, Robert Browning, Neal Kuperman, Bill Moon, Raj Solanki

Physics Faculty Publications and Presentations

Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of ^_y-InSe and Sb₂Se₃ can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of …