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Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We have measured the thermopower S and electrical conductivity σ in a series of Cu[sub x](SiO[sub 2])[sub 1-x] nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ √T to σ∝ T[sup 1/3] is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Jeffrey Dyck
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.