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Full-Text Articles in Physics
Optical And Electrical Characterization Melt-Grown Bulk Ingaas And Inasp, Jean W. Wei
Optical And Electrical Characterization Melt-Grown Bulk Ingaas And Inasp, Jean W. Wei
Theses and Dissertations
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary …
Investigation Of Gate Leakage Current In Nitrogen-Irradiated Algan/Gan Heterostructures, Rose E. May
Investigation Of Gate Leakage Current In Nitrogen-Irradiated Algan/Gan Heterostructures, Rose E. May
Theses and Dissertations
Due to commercial and government interest in devices capable of functioning in high-power, high-frequency space applications, radiation tolerant AlGaN/GaN devices have been under study in recent years. Passivation of the AlGaN surface by (Si3N4) prevents electron trapping and enhances the 2DEG, but it also increases gate leakage currents, which can lead to device failure. This study sought information about current leakage mechanisms by introducing displacement damage close to the Si3N4/AlGaN interface. The effects of irradiation damage around the Si3N4/AlGaN interface on irradiation-induced leakage current were investigated for three …